US2017236634A1PendingUtilityA1

Monolithic Ceramic Component and Production Method

Assignee: EPCOS AGPriority: Jan 5, 2006Filed: Nov 22, 2016Published: Aug 17, 2017
Est. expiryJan 5, 2026(expired)· nominal 20-yr term from priority
Y10T428/265B32B 2305/80B32B 18/00C04B 2235/6565C04B 2237/702H05K 1/0306C04B 2235/6562H01C 7/10H01F 17/0013H01C 17/06H01F 41/12B32B 2255/205H01F 27/29B32B 37/06C04B 2235/6567H01F 10/20H05K 3/4629C04B 2237/341H01G 4/12H01C 7/18C04B 2237/704H01G 4/30H05K 1/165C04B 2237/62C04B 2237/348H01G 4/012H01G 4/40C04B 2237/343B32B 2307/202H03H 2001/0085B32B 2307/204C04B 2237/564H05K 1/167C04B 2237/68H01G 4/228C04B 2237/346B32B 2264/101H01F 27/32H01G 4/232B32B 2457/16B32B 37/18H05K 3/4688B32B 38/145H01F 10/265B32B 2264/107B32B 2264/12H01C 1/14H05K 1/162H01F 27/2804C04B 2237/366H01F 2027/2809H05K 3/4611B32B 2307/704B32B 38/0036H01F 41/041H01C 7/008B32B 2305/77H10W 90/00H10W 70/685H10W 70/05H10W 42/20
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Claims

Abstract

A film stack made from compacted green films and capable of being sintered to form a ceramic component with monolithic multi-layer structure is disclosed. The film stack includes a functional layer comprising a green film comprising a functional ceramic and a tension layer comprising a green film comprising a dielectric material. The tension layer is directly adjacent to the functional layer in the multi-layer structure. The multilayer structure also includes a first metallization plane and second metallization plane. The functional layer is between the first metallization plane and the second metallization plane.

Claims

exact text as granted — not AI-modified
1 .- 14 . (canceled) 
     
     
         15 . A method for manufacturing a ceramic component comprising,
 producing first green films made from a functional ceramic and second green films made from a recrystallizing dielectric material with the aid of a binder,   generating via contacts are generated in the green films, the via contacts being filled with an electrically conductive paste,   generating electrically conductive structures on the green films,   stacking the first and second green films one above the other to form a stack,   performing compaction and debinding processes on the stack at a first temperature T 1 ,   heating the stack to a second temperature T 2 >T 1 , in which the dielectric material is recrystallized,   heating the stack to a third temperature T 3 >T 2 , in which the material of the functional ceramic is sintered but the recrystallized dielectric material remains solid, and   cooling the stack to generate a monolithic ceramic multi-layer structure.   
     
     
         16 . The method of  claim 15 , further comprising providing tension layers as outer layers in the film stack, and
 after the sintering of the functional ceramic, generating and baking electrically conductive structures or electrical contact surfaces on a top side of the ceramic multi-layer structure.   
     
     
         17 . The method of  claim 16 , further comprising generating at least two contact surfaces electrically insulated from each other or generating conductive structures on the top side of the multi-layer structure, and
 providing a resistor structure on the ceramic multi-layer structure that connects the two contact surfaces in a high-impedance way.   
     
     
         18 . The method of  claim 17 , wherein providing a resistor structure further comprises printing and baking the resistor structure. 
     
     
         19 . The method of  claim 17 , wherein providing resistor structure further comprises sputtering the resistor structure. 
     
     
         20 . The method of  claim 17 , further comprising generating a passivation layer above the resistor structure. 
     
     
         21 . The method of  claim 15 , wherein producing the second green film comprises using a glass powder with particle sizes in the μm range, the glass powder comprising crystalline particles of a material with a defined crystal lattice. 
     
     
         22 . The method of  claim 21 , wherein the crystalline particles are included in the glass powder in a percentage of 20-60 weight percent. 
     
     
         23 . The method of  claim 15 , wherein heating the stack to the third temperature comprises heating the stack under uniaxial compaction of the films between plane-parallel plates. 
     
     
         24 . The method of  claim 15 , wherein stacking the first and second green films one above the other to form a stack further comprises forming a film stack that includes a plurality of first green films stacked one directly above the other each with electrically conductive structures arranged on the plurality of first green films to form a block; and sintering the block to produce a single functional layer, in which at least one block is stacked in an alternating way with second green films. 
     
     
         25 . The method of  claim 15 , wherein producing first green films comprises a stack with at least two different first green films with different functional ceramics to form a ceramic multi-layer structure and realizing different component functions in the ceramic multi-layer by using electrically conductive structures and/or the electrical contact surfaces. 
     
     
         26 . Monolithic sintered component, formed by a process comprising:
 sintering a stack of green films, the stack comprising:
 a functional layer comprising a green film comprising a functional ceramic, 
 a tension layer comprising a green film comprising a dielectric, material directly adjacent to the functional layer in the multi-layer structure, 
 a first metallization plane and a second metallization plane, the functional layer being between the first metallization plane and the second metallization plane, 
 electrically conductive structures, which form a component function together with the functional layer, in the first and second metallization planes, and 
 wherein the green film for the tension layer has a phase-change temperature below a sintering temperature of the functional ceramic and at which the green film transitions into a recrystallized phase that remains in a solid phase above the sintering temperature of the functional ceramic.

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