Monolithic Ceramic Component and Production Method
Abstract
A film stack made from compacted green films and capable of being sintered to form a ceramic component with monolithic multi-layer structure is disclosed. The film stack includes a functional layer comprising a green film comprising a functional ceramic and a tension layer comprising a green film comprising a dielectric material. The tension layer is directly adjacent to the functional layer in the multi-layer structure. The multilayer structure also includes a first metallization plane and second metallization plane. The functional layer is between the first metallization plane and the second metallization plane.
Claims
exact text as granted — not AI-modified1 .- 14 . (canceled)
15 . A method for manufacturing a ceramic component comprising,
producing first green films made from a functional ceramic and second green films made from a recrystallizing dielectric material with the aid of a binder, generating via contacts are generated in the green films, the via contacts being filled with an electrically conductive paste, generating electrically conductive structures on the green films, stacking the first and second green films one above the other to form a stack, performing compaction and debinding processes on the stack at a first temperature T 1 , heating the stack to a second temperature T 2 >T 1 , in which the dielectric material is recrystallized, heating the stack to a third temperature T 3 >T 2 , in which the material of the functional ceramic is sintered but the recrystallized dielectric material remains solid, and cooling the stack to generate a monolithic ceramic multi-layer structure.
16 . The method of claim 15 , further comprising providing tension layers as outer layers in the film stack, and
after the sintering of the functional ceramic, generating and baking electrically conductive structures or electrical contact surfaces on a top side of the ceramic multi-layer structure.
17 . The method of claim 16 , further comprising generating at least two contact surfaces electrically insulated from each other or generating conductive structures on the top side of the multi-layer structure, and
providing a resistor structure on the ceramic multi-layer structure that connects the two contact surfaces in a high-impedance way.
18 . The method of claim 17 , wherein providing a resistor structure further comprises printing and baking the resistor structure.
19 . The method of claim 17 , wherein providing resistor structure further comprises sputtering the resistor structure.
20 . The method of claim 17 , further comprising generating a passivation layer above the resistor structure.
21 . The method of claim 15 , wherein producing the second green film comprises using a glass powder with particle sizes in the μm range, the glass powder comprising crystalline particles of a material with a defined crystal lattice.
22 . The method of claim 21 , wherein the crystalline particles are included in the glass powder in a percentage of 20-60 weight percent.
23 . The method of claim 15 , wherein heating the stack to the third temperature comprises heating the stack under uniaxial compaction of the films between plane-parallel plates.
24 . The method of claim 15 , wherein stacking the first and second green films one above the other to form a stack further comprises forming a film stack that includes a plurality of first green films stacked one directly above the other each with electrically conductive structures arranged on the plurality of first green films to form a block; and sintering the block to produce a single functional layer, in which at least one block is stacked in an alternating way with second green films.
25 . The method of claim 15 , wherein producing first green films comprises a stack with at least two different first green films with different functional ceramics to form a ceramic multi-layer structure and realizing different component functions in the ceramic multi-layer by using electrically conductive structures and/or the electrical contact surfaces.
26 . Monolithic sintered component, formed by a process comprising:
sintering a stack of green films, the stack comprising:
a functional layer comprising a green film comprising a functional ceramic,
a tension layer comprising a green film comprising a dielectric, material directly adjacent to the functional layer in the multi-layer structure,
a first metallization plane and a second metallization plane, the functional layer being between the first metallization plane and the second metallization plane,
electrically conductive structures, which form a component function together with the functional layer, in the first and second metallization planes, and
wherein the green film for the tension layer has a phase-change temperature below a sintering temperature of the functional ceramic and at which the green film transitions into a recrystallized phase that remains in a solid phase above the sintering temperature of the functional ceramic.Join the waitlist — get patent alerts
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