Nitride semiconductor light emitting device

Abstract

A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.

1 - 7 . (canceled) 
     
     
         8 . A method for producing a nitride semiconductor laser device comprising:
 forming a nitride semiconductor layer;   forming a facet of a cavity by cleaving the nitride semiconductor layer;   forming a first coat film of aluminum nitride or aluminum oxynitride having a thickness of at least 6 nm and at most 200 nm on the facet of the nitride semiconductor layer by sputtering or electron beam evaporation; and   forming a second coat film on the first coat film.   
     
     
         9 . The method according to  claim 8 , wherein the second coat film comprises a layer of oxide, oxynitride, or nitride. 
     
     
         10 . The method according to  claim 8 , wherein the second coat film is formed by sputtering or electron beam evaporation. 
     
     
         11 . The method according to  claim 8 , wherein the second coat film has a thickness of at least 130 nm and at most 1000 nm. 
     
     
         12 . The method according to  claim 8 , wherein the first coat film is crystallized. 
     
     
         13 . The method according to  claim 8 , further comprising:
 forming a ridge stripe portion with an insulating layer outside the ridge stripe portion to the nitride semiconductor layer prior to the cleaving, wherein the first coat film is also formed on the insulating layer outside the ridge stripe portion.