Systems and methods for fabricating self-aligned resistive/magnetic memory cell

Abstract

Systems and methods are disclosed to form a resistive random access memory (RRAM) by forming a first metal electrode layer; depositing an insulator above the metal electrode layer and etching the insulator to expose one or more metal portions; depositing a Pr 1-X Ca X MnO S (PCMO) layer, in an electrically biased sputtering chamber, above the insulator and the metal portions, to form one or more self-aligned RRAM cells above the first metal electrode; and depositing a second metal electrode layer above the PCMO layer.

1 .- 19 . (canceled) 
     
     
         20 . A method of forming a magnetic random access memory (MRAM), the method comprising:
 forming a first magnetic layer;   depositing an insulator above the magnetic layer;   etching the insulator to expose one or more magnetic layer portions;   depositing a Pr 1-x Ca x MnO 3  (PCMO) layer in an electrically biased sputtering chamber above the insulator and the magnetic layer portions, whereby one or more self-aligned MRAM cells are formed above the first magnetic layer.   
     
     
         21 . The method of  claim 20 , comprising depositing and patterning an insulator layer between a wafer and the first magnetic layer. 
     
     
         22 . The method of  claim 20 , wherein the electrically biased sputtering chamber comprises facing targets. 
     
     
         23 . The method of  claim 22 , comprising forming via holes to connect the first magnetic layer to circuit on the wafer. 
     
     
         24 . The method of  claim 23 , comprising depositing a magnetic layer above the via holes. 
     
     
         25 . The method of  claim 22 , comprising depositing an adhesion layer above the first magnetic layer. 
     
     
         26 . The method of  claim 25 , comprising performing chemical mechanical polishing on the vias. 
     
     
         27 . The method of  claim 20 , comprising depositing a passivation film. 
     
     
         28 . The method of  claim 27 , comprising performing chemical mechanical polishing on the passivated film.