Ii-vi based light emitting semiconductor device

Abstract

The invention provides a light emitting semiconductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn 1-x Mg x O with 1-350 ppm Al, wherein x is in the range of 0<x≦0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

1 . A luminescent material comprising zinc magnesium oxide having the nominal composition Zn 1-x Mg x O with 1-350 ppm Al, wherein x is in the range of 0<x≦0.3. 
     
     
         2 . The luminescent material according to  claim 1 , wherein the zinc magnesium oxide contains 5-40 ppm Al, and wherein x is in the range of 0.02<x≦0.2. 
     
     
         3 . The luminescent material according to  claim 1 , wherein the zinc magnesium oxide is polycrystalline. 
     
     
         4 . The luminescent material according to  claim 1 , wherein the zinc magnesium oxide forms a lattice and the Al is partly present in the zinc magnesium oxide lattice as dopant. 
     
     
         5 . The luminescent material according to  claim 1 , wherein the zinc magnesium oxide forms a lattice and the Al at least partially replaces Zn or Mg lattice positions. 
     
     
         6 . The luminescent material according to  claim 1 , wherein the zinc magnesium oxide forms a lattice and the Al at least partially occupies interstitial positions in the lattice. 
     
     
         7 . The luminescent material according to  claim 1 , wherein a content of sulfur in the luminescent material is lower than 50 ppm. 
     
     
         8 . A method for the production of an aluminum doped zinc magnesium oxide, the method comprising:
 providing a composition comprising Zn, Mg and Al having the nominal composition Zn 1-x Mg x O with 1-350 ppm Al, wherein x is in the range of 0<x≦0.3, and   subsequently annealing the composition to provide said aluminum doped zinc magnesium oxide.   
     
     
         9 . The method according to claim  14 , further comprising heat treating the composition at elevated temperatures prior to said annealing the composition. 
     
     
         10 . The method according to claim  15 , wherein heat treating the composition comprises heat treating under oxidative conditions. 
     
     
         11 . The method according to claim  14 , wherein the composition is polycrystalline.