US2017261662A1PendingUtilityA1
Optical device manufacturing method
Assignee: ELECTRONICS & TELECOMMUNICATIONS RES INSTPriority: Mar 14, 2016Filed: Jan 23, 2017Published: Sep 14, 2017
Est. expiryMar 14, 2036(~9.6 yrs left)· nominal 20-yr term from priority
G02B 5/1847G02B 5/1861G02B 5/1828G02B 27/0012
37
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Claims
Abstract
Provided is an optical device manufacturing method including forming a reflection layer on a substrate, forming a dielectric layer on the reflection layer, and inserting a phase change material layer into the dielectric layer, wherein the inserting of the phase change material layer includes adjusting a position of the phase change material layer to be inserted into the dielectric layer according to a wavelength of incident light incident to the dielectric layer.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . An optical device manufacturing method comprising:
forming a reflection layer on a substrate; forming a dielectric layer on the reflection layer; and inserting a phase change material layer into the dielectric layer, wherein the inserting of the phase change material layer comprises adjusting a position of the phase change material layer to be inserted into the dielectric layer according to a wavelength of incident light incident to the dielectric layer.
2 . The optical device manufacturing method of claim 1 , wherein the forming of the dielectric layer comprises adjusting a thickness of the dielectric layer according to the wavelength of the incident light.
3 . The optical device manufacturing method of claim 2 , wherein the thickness t d,q of the dielectric layer satisfies the following equation,
t
d
,
q
=
(
2
q
-
1
)
λ
0
4
n
d
,
(
q
=
1
,
2
,
3
…
)
where q denotes a resonance order, n d denotes a refractive index of the dielectric layer, and λ 0 denotes the wavelength of the incident light.
4 . The optical device manufacturing method of claim 3 , wherein the dielectric layer comprises:
an upper dielectric layer on the phase change material layer; and a lower dielectric layer under the phase change material layer, wherein a ratio P q,r of a thickness of the upper dielectric layer to the thickness of the dielectric layer satisfies the following equation,
P
q
,
r
=
(
2
r
-
1
)
2
q
,
(
r
=
1
,
2
,
…
,
q
)
where q denotes the resonance order and r denotes an arbitrary natural number.
5 . The optical device manufacturing method of claim 1 , wherein the phase change material layer comprises a chalcogenide material.
6 . An optical device manufacturing method comprising:
forming a reflection layer on a substrate; forming a first dielectric layer having a first thickness on the reflection layer; forming a phase change material layer on the first dielectric layer; and forming a second dielectric layer having a second thickness on the phase change material layer, wherein a sum of the first and second thicknesses has a prescribed thickness and the prescribed thickness is proportional to a wavelength of incident light incident to the substrate.
7 . The optical device manufacturing method of claim 6 , wherein the prescribed thickness t d,q satisfies the following equation,
t
d
,
q
=
(
2
q
-
1
)
λ
0
4
n
d
,
(
q
=
1
,
2
,
3
…
)
where q denotes a resonance order, n d denotes a composite refractive index of the dielectric layers, and λ 0 denotes the wavelength of the incident light.
8 . The optical device manufacturing method of claim 6 , wherein at least one of the first and second thicknesses is adjusted according to the wavelength of the incident light.
9 . The optical device manufacturing method of claim 8 , wherein a ratio P q,r of the second thickness to the prescribed thickness satisfies the following equation,
P
q
,
r
=
(
2
r
-
1
)
2
q
,
(
r
=
1
,
2
,
…
,
q
)
where q denotes the resonance order and r denotes an arbitrary natural number.
10 . The optical device manufacturing method of claim 6 , wherein the first and second dielectric layers comprise an identical material.
11 . The optical device manufacturing method of claim 6 , wherein the phase change material layer comprises a chalcogenide material.Join the waitlist — get patent alerts
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