Nonlinear optical crystal material, method for preparation thereof, and application thereof

Abstract

The present application discloses a nonlinear optical crystal material, preparation method and application of the nonlinear optical crystal material. The nonlinear optical crystal material has an excellent infrared nonlinear optical performance, whose frequency-doubling intensity can reach 9.3 times of AgGaS 2 with the same particle size, and it meets type-I phase matching; and its laser damage threshold can reach 7.5 times of AgGaS 2 with the same particle size. The nonlinear optical crystal material has important application value in the frequency-converters which can be used for frequency doubling, sum frequency, difference frequency, optical parametric oscillation of laser in mid and far infrared waveband, and the like.

1 . A nonlinear optical crystal material, whose molecular formula is
   Ga 2 Se 3      
       wherein the crystal structure of said nonlinear optical crystal material belongs to trigonal system, space group R3 with the lattice parameters of a=b=3˜4.2 Å, c=9˜10 Å, α=β=90°, γ=120° and Z=1. 
     
     
         2 . A nonlinear optical crystal material according to  claim 1 , wherein in the lattice parameters, a=b=3.86 Å, c=9.44 Å. 
     
     
         3 . A method for preparing the nonlinear optical crystal material according to  claim 1 , wherein after homogeneously mixing raw materials containing element gallium, element boron and element selenium with a fluxing agent, said nonlinear optical crystal material is obtained using high temperature solid state method under a vacuum condition. 
     
     
         4 . A method for preparing the nonlinear optical crystal material according to  claim 3 , wherein in said raw materials, the molar ratio of element gallium, element boron and element selenium is Ga:B:Se=2:2:3. 
     
     
         5 . A method for preparing the nonlinear optical crystal material according to  claim 3 , wherein said high temperature solid state method is that the mixture of the raw materials and the fluxing agent is kept in the temperature range from 700° C. to 1000° C. for no less than 24 hours. 
     
     
         6 . A method for preparing the nonlinear optical crystal material according to  claim 3 , wherein said high temperature solid phase method is that the mixture of the raw materials and the fluxing agent is kept in the temperature range from 500° C. to 700° C. for no less than 1 hour, and then kept in the temperature range from 800° C. to 950° C. for no less than 24 hours. 
     
     
         7 . A method for preparing the nonlinear optical crystal material according to  claim 3 , wherein said fluxing agent is at least one selected from alkali metal halides, alkali earth metal halides. 
     
     
         8 . A method for preparing the nonlinear optical crystal material according to  claim 3 , wherein said raw material contains gallium oxide, elementary substance of boron and elementary substance of selenium. 
     
     
         9 - 10 . (canceled) 
     
     
         11 . An infrared detector, comprising a nonlinear optical crystal material of the molecular formula:
   Ga 2 Se 3      wherein the crystal structure of the nonlinear optical crystal material belongs to trigonal system, space group R3 with the lattice parameters of a=b=3˜4.2 Å, c=9˜10 Å, α=β=90°, γ=120° and Z=1; and   the nonlinear optical crystal material is prepared by the method of  claim 3 .   
     
     
         12 . An infrared laser, comprising a nonlinear optical crystal material of the molecular formula:
   Ga 2 Se 3      wherein the crystal structure of the nonlinear optical crystal material belongs to trigonal system, space group R3 with the lattice parameters of a=b=3˜4.2 Å, c=9˜10 Å, α=β=90°, γ=120° and Z=1; and   the nonlinear optical crystal material is prepared by the method of  claim 3     
     
     
         13 . An infrared detector, comprising a nonlinear optical crystal material of the molecular formula:
   Ga 2 Se 3      wherein the crystal structure of the nonlinear optical crystal material belongs to trigonal system, space group R3 with the lattice parameters of wherein in the lattice parameters, a=b=3.86 Å, c=9.44 Å, α=β=90°, γ=120° and Z=1; and   the nonlinear optical crystal material is prepared by the method of  claim 3 .   
     
     
         14 . An infrared laser, comprising a nonlinear optical crystal material of the molecular formula:
   Ga 2 Se 3      wherein the crystal structure of the nonlinear optical crystal material belongs to trigonal system, space group R3 with the lattice parameters of wherein in the lattice parameters, a=b=3.86 Å, c=9.44 Å, α=β=90°, γ=120° and Z=1; and   the nonlinear optical crystal material is prepared by the method of  claim 3 .