US2017292332A1PendingUtilityA1
Polycrystalline Diamond Compact Cutter Having Surface Texturing
Est. expirySep 15, 2034(~8.2 yrs left)· nominal 20-yr term from priority
Inventors:Andrew Gledhill
E21B 10/573E21B 10/5673E21B 10/567
35
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Claims
Abstract
A polycrystalline diamond compact cutter for a tool includes a substrate of cemented carbide and a volume of polycrystalline diamond bonded to the substrate. At least one chamfer extends along an outer circumference of the volume of polycrystalline diamond. A textured surface is disposed on at least the at least one chamfer. The textured surface provides a termination point for crack formation, an increased surface area for heat transfer, and decreases chipping of the volume of polycrystalline diamond.
Claims
exact text as granted — not AI-modified1 . A polycrystalline diamond cutter for a tool, comprising:
a substrate of cemented carbide; a volume of polycrystalline diamond bonded to said substrate; at least one chamfer extending along an outer circumference of the volume of polycrystalline diamond; and a textured surface disposed on at least the at least one chamfer, the textured surface having at least two adjacent repeating elements that are spaced apart about 6 degrees or less from one another, the textured surface providing a termination point for crack formation and decreasing chipping of the volume of polycrystalline diamond.
2 . The polycrystalline diamond cutter of claim 1 , wherein the textured surface has at least three adjacent repeating elements, the outside adjacent repeating elements are each spaced apart about 6 degrees or less from an inside adjacent repeating element.
3 . The polycrystalline diamond cutter of claim 1 , wherein the textured surface is a pattern formed in the volume of polycrystalline diamond.
4 . The polycrystalline diamond cutter of claim 1 , wherein the textured surface is disposed only on the at least one chamfer.
5 . The polycrystalline diamond cutter of claim 3 , wherein the volume of polycrystalline diamond includes a cutting surface having a periphery portion, the textured surface being disposed on the periphery portion and the at least one chamfer.
6 . The polycrystalline diamond cutter of claim 4 , wherein the periphery portion is about 20% of an area the cutting surface.
7 . The polycrystalline diamond cutter of claim 3 , wherein the pattern is a grid formed by a plurality of intersecting radial lines and radial circles.
8 . The polycrystalline diamond cutter of claim 5 , wherein each of the radial lines and radial circles has a depth of about 10 μm to about 0.1 mm from the underlying polycrystalline diamond and a width of about 0.002 inches to about 0.004 inches.
9 . The polycrystalline diamond cutter of claim 3 , wherein the pattern is a plurality of radial lines.
10 . The polycrystalline diamond cutter of claim 9 , wherein each of the radial lines has a depth of about 10 μm to about 0.1 mm from the underlying polycrystalline diamond and a width of about 0.002 inches to about 0.004 inches.
11 . The polycrystalline diamond cutter of claim 9 , wherein spacing between at least two adjacent radial lines is in a range from about 2 degrees to about 6 degrees.
12 . The polycrystalline diamond cutter of claim 3 , wherein the pattern is a plurality of radial circles.
13 . The polycrystalline diamond cutter of claim 12 , wherein each of the radial circles has a depth of about 10 μm to about 0.1 mm from the underlying polycrystalline diamond and a width of about 0.002 inches to about 0.004 inches.
14 . The polycrystalline diamond cutter of claim 3 , wherein the pattern is formed by a plurality of different intersecting patterns.
15 . A method for forming a polycrystalline diamond cutter, comprising the steps of:
providing a cemented carbide substrate; disposing a volume of polycrystalline diamond material on the cemented carbide substrate; subjecting said substrate and volume of diamond material to a high pressure and a high temperature condition to bond said volume of diamond material and substrate; and forming a textured surface on at least at least one chamfer disposed along an outer circumference of the volume of polycrystalline diamond, the textured surface having at least two adjacent repeating elements that are spaced apart about 6 degrees or less from one another, the textured surface providing a termination point for crack formation and decreasing chipping of the volume of polycrystalline diamond.
16 . The method of claim 15 , wherein the textured surface has at least three adjacent repeating elements, the outside adjacent repeating elements are each spaced apart about 6 degrees or less from an inside adjacent repeating element.
17 . The method of claim 15 , wherein the textured surface is a pattern formed in the volume of polycrystalline diamond.
18 . The method of claim 17 , wherein the textured surface is formed only on the at least one chamfer.
19 . The method of claim 17 , wherein the volume of polycrystalline diamond includes a cutting surface having a periphery portion, the textured surface being disposed on the periphery portion and the at least one chamfer.
20 . The method of claim 19 , wherein the periphery portion is about 20% of an area of the cutting surface.
21 . The method of claim 17 , wherein the pattern is a grid formed by a plurality of intersecting radial lines and radial circles.
22 . The method of claim 21 , wherein each of the radial lines and radial circles has a depth of about 10 μm to about 0.1 mm from the underlying polycrystalline diamond and a width of about 0.002 inches to about 0.004 inches.
23 . The method of claim 17 , wherein the pattern is a plurality of radial lines.
24 . The method of claim 23 , wherein each of the radial lines has a depth of about 10 μm to about 0.1 mm from the underlying polycrystalline diamond and a width of about 0.002 inches to about 0.004 inches.
25 . The method of claim 23 , wherein spacing between at least two adjacent radial lines is in a range from about 2 degrees to about 6 degrees.
26 . The method of claim 17 , wherein the pattern is a plurality of radial circles.
27 . The method of claim 26 , wherein each of the radial circles has a depth of about 10 μm to about 0.1 mm from the underlying polycrystalline diamond and a width of about 0.002 inches to about 0.004 inches.
28 . The method of claim 17 , wherein the pattern is formed by a plurality of different intersecting patterns.
29 . The method of claim 15 , further comprising the step of leaching the volume of polycrystalline diamond.
30 . A drilling bit comprising:
a cutting element of a volume of polycrystalline diamond, the cutting element including a cutting edge formed by at least one chamfer extending along an outer circumference of the cutting element, a textured surface disposed on at least the at least one chamfer, the textured surface having at least about 60% diamond along the at least one chamfer, the textured surface providing a termination point for crack formation and decreasing chipping of the volume of polycrystalline diamond, and the textured surface has at least three adjacent repeating elements, the outside adjacent repeating elements are each spaced apart about 6 degrees or less from an inside adjacent repeating element; and a substrate of cemented carbide, the cutting element being bonded to the substrate.Cited by (0)
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