Semiconductor Laser Diode

Abstract

A semiconductor laser diode is provided. In an embodiment the semiconductor laser diode includes a semiconductor layer sequence having semiconductor layers disposed vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 μm emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence.

What is claimed is: 
     
         1 . A semiconductor laser diode comprising:
 a semiconductor layer sequence having semiconductor layers disposed one above the other including an active layer which comprises an active region, the active layer being configured to emit radiation during operation via a radiation coupling-out surface, wherein the radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction, and wherein the semiconductor layer sequence is configured to be heated in a thermal region of influence by reason of the operation;   a metallization layer in direct contact with at least a sub-region of a top side of the semiconductor layer sequence, wherein the top side comprises a semiconductor cover layer, and wherein the metallization layer has a cumulative width and a ratio of the cumulative width to a width of the thermal region of influence varies depending on a distance to the radiation coupling-out surface;   a structured heat-dissipating layer on the top side of the semiconductor layer sequence, wherein the structured heat-dissipating layer comprises at least the metallization layer, wherein the structured heat-dissipating layer allows heat dissipation from the active region which varies in a longitudinal and/or a lateral direction; and   an internal heat sink located directly on the metallization layer in direct contact with the metallization layer, wherein the structured heat-dissipating layer comprises the internal heat sink, wherein the internal heat sink has a structuring, wherein structuring of the internal heat sink comprises materials having different thermal conductivities, such that the internal heat sink has a first material which is arranged laterally between regions having a second material, and wherein the first material has a higher thermal conductivity than the second material.   
     
     
         2 . The semiconductor laser diode according to  claim 1 , wherein the internal heat sink is disposed directly on the metallization layer without a solder connection. 
     
     
         3 . The semiconductor laser diode according to  claim 1 , wherein the ratio of the cumulative width to the width of the thermal region of influence decreases as the distance to the radiation coupling-out surface increases. 
     
     
         4 . The semiconductor laser diode according to  claim 1 , wherein the cumulative width of the metallization layer decreases as the distance to the radiation coupling-out surface increases. 
     
     
         5 . The semiconductor laser diode according to  claim 1 , wherein the metallization layer is wider close to the radiation coupling-out surface than the thermal region of influence. 
     
     
         6 . The semiconductor laser diode according to  claim 1 , wherein the metallization layer is narrower close to the rear surface than the thermal region of influence. 
     
     
         7 . The semiconductor laser diode according to  claim 1 , wherein the metallization layer has openings, wherein at least one or several properties selected from size, number and density of the openings increase(s) as the distance to the radiation coupling-out surface increases. 
     
     
         8 . The semiconductor laser diode according to  claim 7 , wherein a material is arranged in the openings, and wherein the material has a lower thermal conductivity and/or a lower solderability than the metallization layer. 
     
     
         9 . The semiconductor laser diode according to  claim 1 , wherein the metallization layer has an edge in the lateral direction, and wherein the edge is structured in an insular manner. 
     
     
         10 . The semiconductor laser diode according to  claim 1 , wherein at least one semiconductor layer between the semiconductor cover layer and the active layer have a structured edge in the lateral direction. 
     
     
         11 . The semiconductor laser diode according to  claim 1 , wherein the cover layer is a structured current-supplying semiconductor layer. 
     
     
         12 . The semiconductor laser diode according to  claim 1 , wherein the semiconductor layer sequence has a semiconductor layer configured to supply current to the active region between the structured heat-dissipating layer and the active region, having a width that increases at least in a sub-region as the distance to the radiation coupling-out surface becomes larger. 
     
     
         13 . The semiconductor laser diode according to  claim 1 , wherein the semiconductor laser diode is configured to be mounted on an external carrier by a solder layer via a solder side. 
     
     
         14 . The semiconductor laser diode according to  claim 13 , wherein the internal heat sink has the solder side facing away from the semiconductor layer sequence, via which the semiconductor laser diode is mountable on an external carrier by the solder layer. 
     
     
         15 . The semiconductor laser diode according to  claim 14 , wherein the structured heat-dissipating layer comprises the internal heat sink and the internal heat sink has a structuring at least in the lateral and/or longitudinal direction. 
     
     
         16 . The semiconductor laser diode according to  claim 1 , wherein the active region has a width of greater or equal to 30 μm.