Photovoltaic devices, photovoltaic modules provided therewith, and solar power generation systems

Abstract

n-type amorphous semiconductor layers ( 4 ) and p-type amorphous semiconductor layers ( 5 ) are alternately disposed on the back surface of a semiconductor substrate ( 1 ) so as to be separated from each other at a desired interval paralleled with the direction of the surface of the semiconductor substrate ( 1 ). An electrode ( 6 ) is disposed on the n-type amorphous semiconductor layer ( 4 ), and an electrode ( 7 ) is disposed on the p-type amorphous semiconductor layer ( 5 ). A protective film ( 8 ) includes an insulating film, and is disposed on a passivation film ( 3 ), the n-type amorphous semiconductor layer ( 4 ), the p-type amorphous semiconductor layer ( 5 ), and the electrodes ( 6, 7 ), so as to be in contact with the passivation film ( 3 ), the n-type amorphous semiconductor layer ( 4 ), the p-type amorphous semiconductor layer ( 5 ), and the electrodes ( 6, 7 ).

1 . A photovoltaic device comprising:
 a semiconductor substrate;   a first amorphous semiconductor layer which is formed on one surface of the semiconductor substrate and has a first conductivity type;   a second amorphous semiconductor layer which is formed on the one surface of the semiconductor substrate, is formed to be adjacent to the first amorphous semiconductor layer paralleled with a direction of the surface of the semiconductor substrate, and has a second conductivity type which is opposite to the first conductivity type;   a first electrode which is formed on the first amorphous semiconductor layer;   a second electrode which is formed on the second amorphous semiconductor layer so as to be separated from the first electrode with a gap region in between; and   a protective film which includes an insulating film and is formed on the first electrode, the second electrode, and the gap region.   
     
     
         2 . The photovoltaic device according to  claim 1 , wherein the protective film has an opening portion on the first and second electrodes. 
     
     
         3 . The photovoltaic device according to  claim 1 , wherein
 the protective film is continuously formed on the first electrode, the second electrode, and the gap region.   
     
     
         4 . The photovoltaic device according to  claim 1 , wherein
 the protective film is further formed on a peripheral region of the semiconductor substrate.   
     
     
         5 . The photovoltaic device according to  claim 1 , wherein
 the protective film includes an inorganic insulating layer and an amorphous semiconductor layer.   
     
     
         6 . A photovoltaic module comprising:
 a plurality of photovoltaic devices,   wherein each of the plurality of photovoltaic devices is the photovoltaic device according to  claim 1 .   
     
     
         7 . A solar power generation system comprising:
 a photovoltaic module array including a plurality of photovoltaic modules,   a combiner box being connected to the photovoltaic module array,   a power conditioner being connected to the combiner box,   a distribution board being connected to the power conditioner and an electrical equipment, and   a power meter being connected to the distribution board and grid interconnection,   wherein each of plurality of photovoltaic modules is the photovoltaic module according to  claim 6 .   
     
     
         8 . The solar power generation system according to  claim 7 , further comprising a storage battery being connected to the power conditioner.