Imaging device and method of manufacturing the same

Abstract

A groove-type through hole passing through a silicon layer and a first interlayer insulating film is formed in a region around a chip formation region including a photodiode. In the groove-type through hole, a wall-like wall-type conductive pass-through portion corresponding to the groove-type through hole is formed. An electrode pad is in contact with the wall-type conductive pass-through portion. The electrode pad is electrically connected to a first interconnection through the wall-type conductive pass-through portion.

1 - 7 . (canceled) 
     
     
         8 . A method of manufacturing an imaging device, comprising the steps of:
 forming a light reception sensor portion in a first main surface of a semiconductor layer supported by a first support substrate;   forming a through hole including a groove-like groove-type through hole passing through said semiconductor layer, which reaches a second main surface opposed to said first main surface from a side of said first main surface of said semiconductor layer;   forming a conductive pass-through portion including a wall-like wall-type conductive pass-through portion corresponding to said groove-type through hole by forming a conductive film in said through hole as electrically being isolated from said semiconductor layer;   forming an interlayer insulating film and a plurality of interconnection layers including an interconnection layer electrically connected to said conductive pass-through portion on the side of said first main surface of said semiconductor layer;   bonding a second support substrate to said interlayer insulating film;   removing said first support substrate; and   forming an electrode pad electrically connected to said conductive pass-through portion as being in contact with said conductive pass-through portion, on a side of said second main surface of said semiconductor layer.   
     
     
         9 . The method of manufacturing an imaging device according to  claim 8 , wherein
 said step of forming a conductive pass-through portion includes the step of forming said conductive pass-through portion so as to protrude from said second main surface of said semiconductor layer, and   the method of manufacturing an imaging device comprises the step of forming at least a light shield film, a color filter, and a microlens on the side of said second main surface of said semiconductor layer, with said conductive pass-through portion serving as an alignment mark.   
     
     
         10 . The method of manufacturing an imaging device according to  claim 9 , wherein
 said step of forming a light shield film and said step of forming an electrode pad are simultaneously performed.   
     
     
         11 . The method of manufacturing an imaging device according to  claim 8 , comprising the step of forming a conductive plug electrically connecting said light reception sensor portion and another interconnection layer of said plurality of interconnection layers on the side of said first main surface of said semiconductor layer  5  to each other, wherein
 said step of forming a conductive plug and said step of forming a conductive pass-through portion are simultaneously performed. 
 
     
     
         12 . The method of manufacturing an imaging device according to  claim 8 , comprising the step of forming a seal ring so as to surround a region where said light reception sensor portion and said electrode pad are arranged, wherein
 said step of forming a seal ring and said step of forming a conductive pass-through portion are performed in parallel.