Apparatus and method

Abstract

An apparatus and a method for processing a surface of a substrate exposes the surface of the substrate to alternating surface reactions of at least a first starting material and a second starting material according to the principles of atomic layer deposition method. A first starting material is fed on the surface of the substrate locally by a source by moving the source in relation to the substrate, and the surface of the substrate processed with the first starting material is exposed to a second starting material present in the atmosphere surrounding the source.

1 . An apparatus for processing a surface of a substrate by exposing the surface of the substrate to alternating surface reactions of at least a first starting material and a second starting material according to the principles of atomic layer deposition method, wherein the apparatus comprises one or more sources for feeding the first starting material locally on the surface of the substrate and feeding means for feeding second starting material to atmosphere surrounding the one or more sources, and that the one or more sources are positioned in the atmosphere comprising the second starting material. 
     
     
         2 . The apparatus according to  claim 1 , wherein the source comprises one or more starting material zone(s), through which the first starting material is fed locally on the surface of the substrate. 
     
     
         3 . The apparatus according to  claim 1 , wherein the source is adapted to be movable on the surface of the substrate or in the proximity thereof in relation to the substrate. 
     
     
         4 . The apparatus according to  claim 1 , wherein the source is adapted to be rotated in relation to the surface of the substrate. 
     
     
         5 . The apparatus according to  claim 4 , wherein the source comprises a rotatable starting material feeding member, which comprises one or more starting material zone(s) for feeding first starting material on the surface of the substrate. 
     
     
         6 . The apparatus according to  claim 5 , wherein the starting material feeding member is adapted to be rotatable about the first rotation axis and to feed the first starting material substantially in the direction of the first rotation axis via the starting material zone. 
     
     
         7 . The apparatus according to  claim 5 , wherein the starting material feeding member is adapted to be rotatable about the second rotation axis and to feed the first starting material substantially transversely, radially or perpendicularly in relation to the second rotation axis via the starting material zone. 
     
     
         8 . The apparatus according to  claim 1 , wherein the substrate is adapted to be movable in relation to the source. 
     
     
         9 . The apparatus according to  claim 3 , wherein the source or the gas feeding member is adapted to be movable substantially with a reciprocating movement directed in accordance with the surface of the substrate on the surface of the substrate or in the proximity of the surface. 
     
     
         10 . The apparatus according to  claim 1 , wherein the source for conducting at least one flushing agent to the surface of the substrate for flushing of the surface of the substrate. 
     
     
         11 . The apparatus according to claim wherein the source comprises at least one suction zone for drawing the first starting material or the flushing agent fed on the surface of the substrate or for providing vacuum between the source and the surface of the substrate. 
     
     
         12 . The apparatus according to  claim 1 , wherein the source comprises two or more starting material zones, which are separated from each other by a slit or space in flow connection to the surrounding atmosphere for exposing the surface of the substrate to the second starting material between the starting material zones. 
     
     
         13 . The apparatus according to  claim 5 , wherein the source comprises two or more starting material feeding members, which are separated from each other by a slit or space opening to the surrounding atmosphere for exposing the surface of the substrate to the second starting material between the starting material feeding members. 
     
     
         14 . The apparatus according to  claim 1 , wherein the apparatus comprises two or more sources, which are separated from each other by a slit or space opening to the surrounding atmosphere for exposing the surface of the substrate to the second starting material between the sources. 
     
     
         15 . The apparatus according to  claim 1 , wherein the apparatus comprises a deposition chamber, wherein the source is positioned and into which deposition chamber the atmosphere is provided. 
     
     
         16 . The apparatus according to  claim 1 , wherein the apparatus is adapted to function in normal atmospheric pressure or in vacuum. 
     
     
         17 . The apparatus according to  claim 1 , wherein the first or the second starting material is plasma or radical or is adapted to provide a sparkle. 
     
     
         18 . The apparatus according to  claim 1 , wherein the second starting material is reactive or non reactive. 
     
     
         19 . The apparatus according to  claim 1 , wherein the second starting material is air, water vapor or oxygen.