US2018002239A1PendingUtilityA1

Method of Joining Metal-Ceramic Substrates to Metal Bodies

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Assignee: IXYS SEMICONDUCTOR GMBHPriority: May 31, 2011Filed: Sep 16, 2017Published: Jan 4, 2018
Est. expiryMay 31, 2031(~4.9 yrs left)· nominal 20-yr term from priority
Inventors:Heiko Knoll
H10W 70/698H10W 70/05H10W 40/255C04B 2237/403C04B 2237/407C04B 2237/708C04B 2237/704C04B 37/026C04B 2237/128H01L 2924/09701H01L 21/4846C04B 2237/402H01L 23/147C04B 2237/72C04B 2235/665C04B 2237/366H01L 2924/0002C04B 2237/706C04B 2237/368H01L 23/3735C04B 2235/656C04B 2237/86C04B 2237/343C04B 2237/121C04B 2237/125C04B 37/021C04B 2237/126C04B 2235/96
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Claims

Abstract

A method of joining a metal-ceramic substrate having metalization on at least one side to a metal body by using a metal alloy is disclosed. The metal body has a thickness of less than 1.0 mm, and the metal alloy contains aluminum and has a liquidus temperature of greater than 450° C. The resulting metal-ceramic module provides a strong bond between the metal body and the ceramic substrate. The resulting module is useful as a circuit carrier in electronic appliances, with the metal body preferably functioning as a cooling body.

Claims

exact text as granted — not AI-modified
1 - 12 . (canceled) 
     
     
         13 . A module comprising:
 a metal-ceramic substrate having metalization on at least one side, wherein the metal-ceramic substrate is adapted to have a semiconductor component disposed on at least one metalized side of the metal-ceramic substrate, and wherein the metal-ceramic substrate includes a ceramic substrate and no more than two metal layers each of which directly contacts the ceramic substrate;   a metal body having a thickness of less than 1 mm; and   a joining region joining the ceramic substrate to the metal body, the joining region including a metal alloy containing aluminum and having a liquidus temperature of greater than 450° C.   
     
     
         14 . The module of  claim 13 , wherein the peeling force required for separating the metal-ceramic substrate from the metal body is greater than 3 N/mm. 
     
     
         15 . The module of  claim 14  used as a circuit carrier in an electronic appliance. 
     
     
         16 . The module of  claim 13 , wherein a surface of the metal-ceramic substrate that contacts the metal alloy has a first surface area, wherein a surface of the metal body that contacts the metal alloy has a second surface area, and wherein the first surface area is smaller than the second surface area. 
     
     
         17 . The module of  claim 13 , wherein the metal alloy further comprises silicon. 
     
     
         18 . The module of  claim 13 , wherein the metal alloy further comprises magnesium. 
     
     
         19 . The module of  claim 13 , wherein based on the total weight of the metal alloy, the metal alloy contains more than 50.0% aluminum by weight. 
     
     
         20 . The module of  claim 13 , wherein the metalization on the metal-ceramic substrate is on a side of the metal-ceramic substrate facing away from the metal body. 
     
     
         21 . The module of  claim 20 , wherein the metalization comprises copper. 
     
     
         22 . The module of  claim 20 , wherein the metalization comprises aluminum. 
     
     
         23 . The module of  claim 13 , wherein the module is at least partly coated with at least one of nickel, gold, and silver. 
     
     
         24 . The module of  claim 13 , wherein the metal body comprises aluminum. 
     
     
         25 . The module of  claim 13 , wherein a ceramic portion of the metal-ceramic substrate comprises at least one of aluminum oxide, silicon nitride and aluminum nitride. 
     
     
         26 . The module of  claim 13 , wherein the metal body comprises at least one of AlSiC, MoCu, WCu, CuMoCu, and Cu/Invar/Cu. 
     
     
         27 . The module of  claim 13 , wherein a side of the metal-ceramic substrate facing the metal body is smaller than a side of the metal body facing the metal-ceramic substrate. 
     
     
         28 . A module comprising:
 a metal-ceramic substrate adapted to have a semiconductor component disposed on at least one metalized side of the metal-ceramic substrate, wherein the metal-ceramic substrate includes a ceramic substrate and no more than two metal layers;   a metal body having a thickness of less than 1 mm; and   a metal alloy that includes aluminum and that has a liquidus temperature of at least 450° C., wherein the metal alloy is disposed between the metal-ceramic substrate and the metal body, wherein an upper surface of the metal alloy contacts a lower surface of the metal-ceramic substrate, wherein a lower surface of the metal alloy contacts an upper surface of the metal body, and wherein the metal-ceramic substrate is bonded to the metal body such that a peel force for separating the metal-ceramic substrate from the metal body exceeds 3 N/mm.   
     
     
         29 . The module of  claim 28 , wherein the metal alloy contains more than 50.0% aluminum by weight. 
     
     
         30 . The module of  claim 28 , wherein the metal alloy further comprises magnesium. 
     
     
         31 . The module of  claim 28 , wherein the module is at least partly coated with at least one of nickel, gold, and silver. 
     
     
         32 . The module of  claim 28 , wherein a ceramic portion of the metal-ceramic substrate comprises at least one of aluminum oxide, silicon nitride and aluminum nitride.

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