Semiconductor device

Abstract

A semiconductor device ( 1 ) according to an embodiment includes: a semiconductor substrate; a first well ( 15 ) formed on the semiconductor substrate; a second well ( 15 ) formed on the semiconductor substrate; first fins ( 11 ) formed in the first well; second fins ( 21 ) formed in the second well; and a first electrode ( 12 a ) connected to each of the first and second fins. The first well and the first fins ( 11 ) have the same conductivity type, and the second well and the second fins ( 21 ) have different conductivity types.

1 . A semiconductor device comprising:
 a semiconductor substrate;   a first well formed on the semiconductor substrate;   a second well formed on the semiconductor substrate;   a first fin formed on the first well;   a second fin formed on the second well; and   a first electrode connected to each of the first fin and the second fin,   wherein the first well and the first fin have the same conductivity type, and the second well and the second fin have different conductivity types.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the first well and the second well have the same conductivity type. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the first well and the second well have different conductivity types. 
     
     
         4 . The semiconductor device according to  claim 1 , further comprising:
 a third fin formed on the second well; and   a second electrode connected to each of the second fin and the third fin.   
     
     
         5 . The semiconductor device according to  claim 4 , wherein the second electrode is also connected to the first fin. 
     
     
         6 . The semiconductor device according to  claim 4 , further comprising a third electrode connected to each of the second fin and the third fin and formed between the first electrode and the second electrode in a plan view. 
     
     
         7 . The semiconductor device according to  claim 6 , wherein the third electrode is also connected to the first fin. 
     
     
         8 . The semiconductor device according to  claim 1 , further comprising:
 a third fin formed on the first well; and   a second electrode connected to each of the first fin and the third fin.   
     
     
         9 . The semiconductor device according to  claim 8 , wherein the second electrode is also connected to the second fin. 
     
     
         10 . The semiconductor device according to  claim 8 , further comprising a third electrode connected to each of the first fin and the third fin and formed between the first electrode and the second electrode in a plan view. 
     
     
         11 . The semiconductor device according to  claim 10 , wherein the third electrode is also connected to the second fin. 
     
     
         12 . The semiconductor device according to  claim 10 , wherein the third electrode is connected to a first potential. 
     
     
         13 . A semiconductor device comprising:
 a semiconductor substrate;   a first well formed on the semiconductor substrate;   a second well formed on the semiconductor substrate;   a first fin-type transistor formed in the first well; and   a fin formed in the second well, wherein   an electrode of the first fin-type transistor is connected to the fin formed in the second well,   the first well and the first fin-type transistor have different conductivity types, and   the second well and the fin have the same conductivity type.   
     
     
         14 . A semiconductor device comprising:
 a semiconductor substrate;   a first well formed on the semiconductor substrate;   a second well formed on the semiconductor substrate;   a first fin formed in the first well;   a second fin formed in the second well; and   a first electrode connected to each of the first fin and the second fin, wherein   the first well and the first fin have the same conductivity type,   the second well and the second fin have the same conductivity type, and   the first well and the second well have different conductivity types.