US2018044219A1PendingUtilityA1

Edge chamfering methods

Assignee: CORNING INCPriority: Dec 17, 2013Filed: Jul 26, 2017Published: Feb 15, 2018
Est. expiryDec 17, 2033(~7.4 yrs left)· nominal 20-yr term from priority
B23K 26/53B23K 26/0869B23K 26/037B23K 26/361Y02P40/57B23K 26/04B23K 26/083B23K 26/0624Y10T428/15C03B 33/0222Y10T428/24777B23K 2103/50B23K 26/02B23K 26/402C03B 33/082B24B 9/10B23K 26/362C03B 33/091B23K 2103/54C03C 21/002B23K 26/0057B23K 2203/50B23K 2203/54
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Claims

Abstract

Processes of chamfering and/or beveling an edge of a glass or other substrate of arbitrary shape using lasers are described herein. Three general methods to produce chamfers on glass substrates are disclosed. The first method involves cutting the edge with the desired chamfer shape utilizing an ultra-short pulse laser. Treatment with the ultra-short laser may be optionally followed by a CO 2 laser for fully automated separation. The second method is based on thermal stress peeling of a sharp edge corner, and it has been demonstrated to work with different combination of an ultrashort pulse and/or CO 2 lasers. A third method relies on stresses induced by ion exchange to effect separation of material along a fault line produced by an ultra-short laser to form a chamfered edge of desired shape.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A glass article including at least one chamfered edge having a plurality of defect lines extending at least 250 μm, the defect lines each having a diameter less than or equal to about 5μm. 
     
     
         2 . The glass article of  claim 1 , wherein the glass article comprises chemically strengthened glass. 
     
     
         3 . The glass article of  claim 1 , wherein the glass article comprises non-strengthened glass. 
     
     
         4 . The glass article of  claim 1 , wherein the chamfered edge has an Ra surface roughness less than about 0.5 μm. 
     
     
         5 . The glass article of  claim 1 , wherein the chamfered edge has subsurface damage up to a depth less than or equal to about 75 μm.

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