Diamond Semiconductor System and Method

Abstract

Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The system may include a diamond material having n-type donor atoms and a diamond lattice, wherein 0.16% of the donor atoms contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice at 100 kPa and 300K. The method of fabricating diamond semiconductors may include the steps of selecting a diamond material having a diamond lattice; introducing a minimal amount of acceptor dopant atoms to the diamond lattice to create ion tracks; introducing substitutional dopant atoms to the diamond lattice through the ion tracks; and annealing the diamond lattice.

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         5 . A method of fabricating diamond semiconductors, the method including the steps of:
 selecting a diamond material having a diamond lattice, forming a diamond layer on a silicon dioxide layer;   introducing acceptor dopant atoms to the diamond lattice to create pathways;   introducing substitutional dopant atoms to the diamond lattice through the pathways; and   annealing the diamond lattice to remove the pathways;   wherein the introduction of the acceptor dopant atoms does not create a critical density of more than 10 22 /cm 3  of vacancies in the diamond layer.   
     
     
         6 . The method of  claim 5 , wherein the diamond material is intrinsic diamond. 
     
     
         7 . The method of  claim 5 , wherein the acceptor dopant atoms are introduced at 293 to 298 degrees Kelvin. 
     
     
         8 . The method of  claim 5 , wherein the acceptor dopant, atoms are boron. 
     
     
         9 . The method of  claim 5 , wherein the amount of acceptor dopant atoms is between 5×10 8 /cm 2  and 5×10 10 /cm 2 . 
     
     
         10 . The method of  claim 5 , wherein the substitutional dopant atoms are introduced at or below 78 degrees Kelvin. 
     
     
         11 . The method of  claim 5 , wherein the substitutional dopant atoms are introduced at less than 500 keV. 
     
     
         12 . The method of  claim 5 , wherein the substitutional dopant atoms are introduced at less than 140 keV and at a 6 degree offset. 
     
     
         13 . The method of  claim 5 , wherein the substitutional dopant atoms are phosphorus. 
     
     
         14 . The method of  claim 5 , wherein the substitutional dopant atoms are introduced at a concentration greater than 9×10 17 /cm 3 . 
     
     
         15 . The method of  claim 5 , wherein the annealing takes place at or above 1000 degrees Celsius. 
     
     
         16 . A semiconductor fabricated according to the method of  claim 5 .