Method For Producing a Solar Cell, in Particular a Silicon Thin-Film Solar Cell

Abstract

A method for producing a solar cell, in particular a silicon thin-film solar cell, wherein a TCO layer ( 3 ) is applied to a glass substrate ( 1 ) and at least one silicon layer ( 4, 5 ) is applied to the TCO layer ( 3 ). Before the TCO layer ( 3 ) is applied, electron radiation is applied to the glass substrate ( 1 ), such that a light-scattering layer ( 2 ) of the glass substrate ( 1 ) is produced, to which light-scattering layer the TCO layer ( 3 ) is applied. Alternatively or additionally, a first silicon layer ( 4 ) may be applied to the TCO layer ( 3 ), a laser radiation or electron radiation may be applied to the first silicon layer ( 4 ), and a second silicon layer ( 5 ) may be applied to the irradiated first silicon layer (4).

1 . A method for producing a silicon thin-film solar cell, comprising the following method steps:
 depositing a TCO layer ( 3 ) on a glass substrate ( 1 );   depositing a first silicon layer ( 4 ) on the TCO layer ( 3 );   exposing the first silicon layer ( 4 ) to laser radiation or electron radiation; and   depositing a second silicon layer ( 5 ) on the irradiated first silicon layer ( 4 );   wherein the second silicon layer ( 5 ) is deposited at temperatures below 300° C. to prevent temperature-induced impairment of the silicon thin-film solar cell being produced.   
     
     
         2 . The method according to  claim 1 , wherein the TCO layer ( 3 ), the first silicon layer ( 4 ) and the second silicon layer ( 5 ) are all deposited at temperatures below 300° C. to prevent temperature-induced impairment of the silicon thin-film solar cell being produced. 
     
     
         3 . The method according to  claim 1 , wherein the second silicon layer ( 5 ) is deposited at room temperature. 
     
     
         4 . The method according to  claim 2 , wherein the TCO layer ( 3 ), the first silicon layer ( 4 ) and the second silicon layer ( 5 ) are all deposited at room temperature.