US2018090568A1PendingUtilityA1
Process for fabricating silicon nanostructures
Assignee: ADVANCED SILICON GROUP INCPriority: Apr 14, 2008Filed: Nov 29, 2017Published: Mar 29, 2018
Est. expiryApr 14, 2028(~1.7 yrs left)· nominal 20-yr term from priority
H10P 50/695H10P 50/667H10P 50/642H10P 14/69215H10P 14/6939H10P 14/6532H10P 14/6508H10P 14/6342H10P 14/6314H10P 14/3462H10P 14/3411H10P 14/3256H10P 14/3238H10P 14/683H10P 14/418H10P 14/44H01L 21/32134H01L 21/02532H01L 21/3086B82Y 20/00H01L 21/02118H01M 4/134H01L 31/0352H01M 4/661H01L 21/02513H01L 21/02164H01L 21/0234H01M 10/0525H01L 31/02363H01L 21/02603H01L 29/16H01M 2004/027C23C 14/34H01M 4/366H01L 21/30604H01L 31/0236H01L 21/02488H01L 21/02282H01L 21/2855Y02E10/50H01L 21/02175H01M 4/0492H01L 29/0676H01L 31/028H01L 29/0669H01L 29/04H01M 4/386B01J 20/28007H01L 21/28568B82Y 30/00H01L 21/02244Y10S977/762H01M 4/1395B01J 20/10H01L 21/02307H10D 62/122H10D 62/83H10D 62/40H10F 77/703H10F 77/122H10F 77/70H10F 77/14H10D 62/119
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Claims
Abstract
A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A nanostructured array comprising polycrystalline silicon, wherein the nanostructures of the array have lengthwise directions disposed at a non-zero angle to a silicon-containing substrate, wherein the array is formed by etching a substrate composed primarily of polycrystalline silicon.Join the waitlist — get patent alerts
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