Method for manufacturing light emitting element and light emitting element

Abstract

A light emitting element manufacturing method of allowing a semiconductor laminated part which includes a light emitting layer and comprises a group-III nitride semiconductor to grow on a substrate surface in which protrusions are formed in a period which is larger than an optical wavelength of light emitted from the light emitting layer and is smaller than a coherent length of the light, the method includes: forming a buffer layer along the substrate surface having the protrusions; allowing crystal nuclei which have facet surfaces and are separated from each other to grow on the buffer layer such that the crystal nuclei include at least one protrusion; and allowing a planarization layer to grow on the buffer layer in which the crystal nuclei are formed, wherein the crystal nuclei have a flat upper surface.

1 . A light emitting element manufacturing method of allowing a semiconductor laminated part which includes a light emitting layer and comprises a group-III nitride semiconductor to grow on a substrate surface in which protrusions are formed in a period which is larger than an optical wavelength of light emitted from the light emitting layer and is smaller than a coherent length of the light, the method comprising:
 forming a buffer layer along the substrate surface having the protrusions;   allowing crystal nuclei which have facet surfaces and are separated from each other to grow on the buffer layer such that the crystal nuclei include at least one protrusion; and   allowing a planarization layer to grow on the buffer layer in which the crystal nuclei are formed, wherein   the crystal nuclei have a flat upper surface.   
     
     
         2 . The light emitting element manufacturing method according to  claim 1 , wherein the buffer layer is formed by sputtering which uses AIN as a target. 
     
     
         3 . A light emitting element manufactured by the light emitting element manufacturing method according to  claim 1 , wherein
 the semiconductor laminated part includes the buffer layer, the crystal nuclei and the planarization layer; and   an oxygen concentration in the crystal nuclei is higher than that of the planarization layer.