US2018102314A1PendingUtilityA1

Semiconductor device

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Assignee: SK HYNIX INCPriority: Sep 2, 2016Filed: Dec 11, 2017Published: Apr 12, 2018
Est. expirySep 2, 2036(~10.1 yrs left)· nominal 20-yr term from priority
H10W 20/42H10W 20/43H01L 23/5226H01L 23/528H01L 27/1157H01L 27/11582H10D 64/117H10B 41/35H10B 41/50H10B 43/27H10B 43/35H10B 41/27H10B 43/50H10W 20/023
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Claims

Abstract

A semiconductor device may be provided. The semiconductor device may include conductive patterns surrounding a channel film. The conductive patterns may be stacked and spaced apart from one another. The semiconductor device may include a gate contact plug coupled to one of the conductive patterns. The semiconductor device may include support pillars penetrating the conductive patterns in a periphery of the gate contact plug.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A semiconductor device, comprising:
 conductive patterns surrounding a channel film, the conductive patterns stacked and spaced apart from one another;   a gate contact plug coupled to one of the conductive patterns;   a first trench buried film extending in a first direction and penetrating the conductive patterns;   a second trench buried film extending in the first direction, facing the first trench buried film, and penetrating the conductive patterns;   a first support pillar and a second support pillar facing each other in a second direction intersecting the first direction; and   a third support pillar disposed between the gate contact plug and the first trench buried film,   wherein the third support pillar has a greater width in the second direction than the first and second support pillar.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the first and second support pillars each have a bar type shape extending from one end adjacent to the first trench buried film to the second trench buried film. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the first, second, and third support pillars are all spaced apart from one another. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the first support pillar, the second support pillar, the third support pillar and the gate contact plug are disposed between the first trench buried film and the second trench buried film. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the third support pillar is disposed between the first support pillar and the second support pillar.

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