Methods for producing diamond grits for a wafer slicing system

Abstract

A method for producing diamond grits for use in a wafer slicing system includes adjusting an initial diamond size distribution until an intermediate diamond size distribution is generated. The intermediate diamond size distribution has a corresponding simulated penetration thickness value less than or equal a predetermined penetration thickness value, and penetration thickness is a parameter proportional to a depth of subsurface damage that would occur when slicing an ingot using a diamond coated wire having an associated diamond size distribution. The method may include adjusting the intermediate diamond size distribution until a final diamond size distribution is generated, wherein the final diamond size distribution has a maximum diamond grit size that is substantially equal to a predetermined maximum diamond grit size, and manufacturing the diamond coated wire such that the diamond coated wire has a plurality of diamond grits that fit the final diamond size distribution.

What is claimed is: 
     
         1 . A method for producing diamond grits for use in a wafer slicing system, the method comprising:
 adjusting an initial diamond size distribution until an intermediate diamond size distribution is generated, wherein the intermediate diamond size distribution has a corresponding simulated penetration thickness value less than or equal a predetermined penetration thickness value, and wherein penetration thickness is a parameter proportional to a depth of subsurface damage that would occur when slicing an ingot using a diamond coated wire having an associated diamond size distribution;   adjusting the intermediate diamond size distribution until a final diamond size distribution is generated, wherein the final diamond size distribution has a maximum diamond grit size that is substantially equal to a predetermined maximum diamond grit size; and   manufacturing a plurality of diamond grits that fit the final diamond size distribution,   wherein adjusting an initial diamond size distribution comprises adjusting a diamond size range of the initial diamond size distribution.   
     
     
         2 . The method of  claim 1 , wherein adjusting a diamond size range comprises reducing the diamond size range of the initial diamond size distribution. 
     
     
         3 . The method of  claim 2 , wherein reducing the diamond size range comprises reducing the diamond size range to approximately 8 microns. 
     
     
         4 . The method of  claim 1 , wherein adjusting an initial diamond size distribution comprises adjusting a standard deviation of the initial diamond size distribution. 
     
     
         5 . The method of  claim 4 , wherein adjusting a standard deviation comprises increasing the standard deviation of the initial diamond size distribution. 
     
     
         6 . The method of  claim 1 , wherein adjusting an initial diamond size distribution further comprises maintaining an average diamond size of the initial diamond size distribution. 
     
     
         7 . The method of  claim 1 , wherein the predetermined penetration thickness value is approximately 5 microns. 
     
     
         8 . The method of  claim 1 , wherein adjusting the intermediate diamond size distribution comprises adjusting an average diamond size of the intermediate diamond size distribution. 
     
     
         9 . The method of  claim 8 , wherein adjusting an average diamond size of the intermediate diamond size distribution comprises increasing the average diamond size of the intermediate diamond size distribution. 
     
     
         10 . The method of  claim 1 , wherein the predetermined maximum diamond grit size is between approximately 20 microns and 23 microns. 
     
     
         11 . The method of  claim 1 , wherein the simulated penetration thickness value is an average penetration thickness value. 
     
     
         12 . The method of  claim 1 , wherein the simulated penetration thickness value is a maximum penetration thickness value. 
     
     
         13 . The method of  claim 1 , wherein penetration thickness is defined as a thickness of ingot material that a diamond grit oriented substantially orthogonal to a resulting wafer surface would need to cut through to reach the resulting wafer surface.