US2018122729A1PendingUtilityA1

High power and high frequency plastic pre-molded cavity package

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Assignee: UBOTIC COMPANY LTDPriority: Dec 11, 2015Filed: Jan 8, 2018Published: May 3, 2018
Est. expiryDec 11, 2035(~9.4 yrs left)· nominal 20-yr term from priority
H10W 72/0198H10W 72/075H10W 72/073H10W 72/884H10W 90/756H10W 72/5445H10W 72/944H10W 72/59H10W 72/354H10W 72/325H10W 72/352H10W 90/736H10W 70/421H10W 40/778H10W 76/12H10W 95/00H10W 70/461H10W 74/111H10W 40/226H10W 74/124H10W 74/01H10W 70/424H10W 40/259H10W 40/22H01L 24/32H01L 2224/73265H01L 2224/32245H01L 2224/2929H01L 24/92H01L 23/49548H01L 2224/49175H01L 24/06H01L 2924/16195H01L 24/29H01L 23/3675H01L 2224/291H01L 24/97H01L 2224/29339H01L 24/49H01L 24/48H01L 24/73H01L 2224/48091H01L 2224/97H01L 23/3731H01L 2224/48247H01L 21/50H01L 23/49568H01L 23/04H01L 2224/92247H01L 2224/04042H01L 2224/06181
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Claims

Abstract

A cavity package is set forth along with a method of manufacturing thereof. According to one embodiment, the method comprises attaching a metal heat sink to a leadframe using an intermediate structure that is thermally conductive and electrically insulating; molding a plastic body around the heat sink and exposed leads of the leadframe to form a cavity, with partially and selectively exposed lead top surfaces, heat sink top surface, and heat sink bottom surface; attaching a semiconductor device die within cavity on to the exposed top surface of the heat sink using a thermal conductive material; wire bonding respective wire bond pads of the semiconductor device die to the exposed lead top surfaces and to the heat sink for grounding; and attaching a lid to the plastic molded body to protect the wire bonded device within cavity.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method of manufacturing a cavity package comprising:
 i) attaching a metal heat sink to a leadframe using an intermediate structure that is thermally conductive and electrically insulating;   ii) molding a plastic body around the heat sink and exposed leads of the leadframe to form a cavity, with partially and selectively exposed lead top surfaces, heat sink top surface, and heat sink bottom surface;   iii) attaching a semiconductor device die within cavity on to the exposed top surface of the heat sink using a thermal conductive material;   iv) wire bonding respective wire bond pads of the semiconductor device die to the exposed lead top surfaces and to the heat sink for grounding; and   v) attaching a lid to the plastic molded body to protect the wire bonded device within cavity.   
     
     
         2 . A cavity package manufactured in accordance with the method of  claim 1 , comprising a plastic body surrounding and partially exposing an integrated heat sink and leads of a leadframe, and a lid. 
     
     
         3 . A method of manufacturing a cavity package comprising:
 i) bending lead tips of a leadframe to form respective steps;   ii) attaching a metal heat sink to the respective leadframe using an electrically insulative interface;   iii) molding a plastic body around the heat sink and exposed leads of the leadframe to form a cavity, with partially and selectively exposed lead top surfaces, heat sink top surface, and heat sink bottom surface;   iv) attaching a semiconductor device die within cavity on to the exposed top surface of the heat sink using a thermal conductive material;   v) wire bonding respective wire bond pads of the semiconductor device die to the exposed lead top surfaces and to the heat sink for grounding; and   vi) attaching a lid to the plastic molded body to protect the wire bonded device within cavity.

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