High power and high frequency plastic pre-molded cavity package
Abstract
A cavity package is set forth along with a method of manufacturing thereof. According to one embodiment, the method comprises attaching a metal heat sink to a leadframe using an intermediate structure that is thermally conductive and electrically insulating; molding a plastic body around the heat sink and exposed leads of the leadframe to form a cavity, with partially and selectively exposed lead top surfaces, heat sink top surface, and heat sink bottom surface; attaching a semiconductor device die within cavity on to the exposed top surface of the heat sink using a thermal conductive material; wire bonding respective wire bond pads of the semiconductor device die to the exposed lead top surfaces and to the heat sink for grounding; and attaching a lid to the plastic molded body to protect the wire bonded device within cavity.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of manufacturing a cavity package comprising:
i) attaching a metal heat sink to a leadframe using an intermediate structure that is thermally conductive and electrically insulating; ii) molding a plastic body around the heat sink and exposed leads of the leadframe to form a cavity, with partially and selectively exposed lead top surfaces, heat sink top surface, and heat sink bottom surface; iii) attaching a semiconductor device die within cavity on to the exposed top surface of the heat sink using a thermal conductive material; iv) wire bonding respective wire bond pads of the semiconductor device die to the exposed lead top surfaces and to the heat sink for grounding; and v) attaching a lid to the plastic molded body to protect the wire bonded device within cavity.
2 . A cavity package manufactured in accordance with the method of claim 1 , comprising a plastic body surrounding and partially exposing an integrated heat sink and leads of a leadframe, and a lid.
3 . A method of manufacturing a cavity package comprising:
i) bending lead tips of a leadframe to form respective steps; ii) attaching a metal heat sink to the respective leadframe using an electrically insulative interface; iii) molding a plastic body around the heat sink and exposed leads of the leadframe to form a cavity, with partially and selectively exposed lead top surfaces, heat sink top surface, and heat sink bottom surface; iv) attaching a semiconductor device die within cavity on to the exposed top surface of the heat sink using a thermal conductive material; v) wire bonding respective wire bond pads of the semiconductor device die to the exposed lead top surfaces and to the heat sink for grounding; and vi) attaching a lid to the plastic molded body to protect the wire bonded device within cavity.Cited by (0)
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