Substrate processing apparatus

Abstract

A substrate processing method wherein a solidification liquid, having a solidification point higher than normal temperature, is supplied on a top surface of a substrate and solidified in a normal-temperature atmosphere to form a solidified material of the solidification liquid on the top surface.

What is claimed is: 
     
         1 . A substrate processing method, comprising:
 a first step of supplying a solidification liquid on a top surface of a substrate on which particles are adhered and forming a solidified material of the solidification liquid on the top surface of the substrate, whereby the particles are separated from the top surface of the substrate in the solidified material, the solidification liquid having a solidification point higher than normal temperature; and   a second step of removing the solidified material of the solidification liquid from the top surface of the substrate to remove the particles from the top surface of the substrate with the solidified material.   
     
     
         2 . The substrate processing method according to  claim 1 , wherein:
 the first step includes a step of supplying the solidification liquid to the top surface of the substrate after heating it to a temperature equal to or higher than the solidification point of the solidification liquid.   
     
     
         3 . The substrate processing method according to  claim 1 , further comprising a third step of promoting solidification of the solidification liquid by supplying a cooling fluid having a temperature lower than the solidification point of the solidification liquid to the substrate. 
     
     
         4 . The substrate processing method according to  claim 3 , wherein:
 the third step includes a step of supplying the cooling fluid to the top surface of the substrate to which the solidification liquid was supplied.   
     
     
         5 . The substrate processing method according to  claim 3 , wherein:
 the third step includes a step of supplying the cooling fluid to an under surface of the substrate to which the solidification liquid was supplied.   
     
     
         6 . The substrate processing method according to  claim 1 , wherein:
 the second step includes a step of removing the solidified material after the solidification liquid is solidified after the elapse of a predetermined time following the supply of the solidification liquid to the top surface of the substrate.   
     
     
         7 . The substrate processing method according to  claim 1 , wherein:
 the second step includes a step of removing the solidified material by supplying a high-temperature removing liquid having a temperature higher than the solidification point of the solidification liquid to the top surface of the substrate formed with the solidified material.   
     
     
         8 . The substrate processing method according to  claim 1 , wherein:
 the second step includes a step of removing the solidified material by supplying a removing liquid, which dissolves the solidification liquid, to the top surface of the substrate formed with the solidified material.   
     
     
         9 . The substrate processing method according to  claim 1 , further comprising a fourth step of cooling the solidified material to reduce the temperature of the solidified material after the solidified material is formed and before the solidified material is removed. 
     
     
         10 . The substrate processing method according to  claim 9 , wherein:
 the fourth step includes a step of supplying a cooling fluid having a temperature lower than the solidification point of the solidification liquid to the top surface of the substrate formed with the solidified material.   
     
     
         11 . The substrate processing method according to  claim 9 , wherein:
 the fourth step includes a step of supplying a cooling fluid having a temperature lower than the solidification point of the solidification liquid to an under surface of the substrate formed with the solidified material.   
     
     
         12 . The substrate processing method according to  claim 3 , wherein:
 the third step includes a step of cooling the solidified material by continuing to supply the cooling fluid until the second step even after the solidified material is formed.   
     
     
         13 . The substrate processing method according to  claim 1 , further comprising a fifth step of rinsing the top surface of the substrate by supplying a rinsing liquid to the top surface of the substrate after the second step. 
     
     
         14 . The substrate processing method according to  claim 8 , wherein:
 the second step is a step of rinsing the top surface of the substrate by continuing to supply the removing liquid even after the solidified material is removed.   
     
     
         15 . The substrate processing method according to  claim 1 , wherein:
 the first step includes   a sixth step of flowing the solidification liquid supplied from a solidification liquid supplier to a nozzle via a pipe so as to discharge the solidification liquid on the top surface of the substrate, and   a seventh step of preventing solidification of the solidification liquid in the nozzle and the pipe.   
     
     
         16 . The substrate processing method according to  claim 15 , wherein:
 the seventh step is a step of keeping the temperature of the solidification liquid in the nozzle and the pipe equal to or higher than the solidification point of the solidification liquid.   
     
     
         17 . The substrate processing method according to  claim 16 , wherein:
 the pipe includes an inner tube having one end connected to the solidification liquid supplier and the other end connected to the nozzle, and an outer tube into which the inner tube is inserted; and   the seventh step is a step of supplying a temperature-retaining fluid having a temperature higher than that of the solidification liquid between the inner tube and the outer tube.   
     
     
         18 . The substrate processing method according to  claim 15 , wherein:
 the seventh step includes a step of discharging the solidification liquid in the nozzle and the pipe from a discharge port of the nozzle by supplying a purging fluid having a temperature higher than that of the solidification liquid to the one end of the pipe after the first step.   
     
     
         19 . The substrate processing method according to  claim 15 , wherein:
 the seventh step includes a step of discharging the solidification liquid in the nozzle and the pipe from the one end of the pipe by applying a negative pressure to the one end of the pipe after the first step.