Deposition system and method using a delivery head separated from a substrate by gas pressure

Abstract

A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material, wherein one or more of the gas flows provides a pressure that at least contributes to the separation of the surface of the substrate from the face of the delivery head. A system capable of carrying out such a process is also disclosed.

1 . An atomic layer deposition system for depositing a thin film onto a substrate comprising:
 a delivery head having an output face with a means for providing a series of gas flows and a means for moving the substrate relative to the series of gas flows, wherein:   at least a portion of the output face provides the series of gas flows in the order of a gas flow of a first reactant gas, a gas flow of a purge gas, a gas flow of a second reactant gas; wherein each of the gas flows flow from an associated output opening in the output face to one or more associated exhaust openings in the output face and is located between the output face and a surface of the substrate, and wherein   the distance between of the substrate and the output face is at least in part controlled by one or more of the gas flows during thin film deposition.   
     
     
         2 . The atomic layer deposition system of  claim 1  wherein the gas flows are parallel to the direction of the relative motion of the substrate. 
     
     
         3 . The atomic layer deposition system of  claim 2  wherein the output face has alternating output openings and exhaust openings. 
     
     
         4 . The atomic layer deposition system of  claim 2  wherein each of the gas flows shares an exhaust opening with an adjacent gas flow. 
     
     
         5 . The atomic layer deposition system of  claim 2  wherein the gas flow has a portion which is in the direction of substrate travel and a portion that is 180 degrees to the direction of the relative motion of the substrate. 
     
     
         6 . The atomic layer deposition system of  claim 1  wherein in the series of gas flows in the portion of the output face, a portion of the purge gas flow is exhausted with the first reactant gas flow in a first common exhaust opening and a portion of the purge gas flow is exhausted with the second reactant gas flow in a second common exhaust opening. 
     
     
         7 . The atomic layer deposition system of  claim 1  wherein the gas flows are transverse to the direction of the relative motion of the substrate. 
     
     
         8 . The atomic layer deposition system of  claim 7  wherein there are exhaust openings at the edge of the output face. 
     
     
         9 . The atomic layer deposition system of  claim 7  wherein the gas flow has a portion which flows toward an edge of the substrate and a portion that flows toward an opposite edge of the substrate. 
     
     
         10 . The atomic layer deposition system of  claim 7  wherein the gas flows are perpendicular to the direction of the relative motion of the substrate.