Arrayed semiconductor device, optical transmission module, optical module, and method for manufacturing thereof

Abstract

In the arrayed semiconductor optical device, a plurality of semiconductor optical devices including a first semiconductor optical device and a second semiconductor optical device are monolithically integrated on a semiconductor substrate, each of the semiconductor optical devices includes a first semiconductor layer having a multiple quantum well layer and a grating layer disposed on an upper side of the first semiconductor layer, a layer thickness of the first semiconductor layer of the first semiconductor optical device is thinner than a layer thickness of the first semiconductor layer of the second semiconductor optical device, and a height of the grating layer of the first semiconductor optical device is lower than a height of the grating layer of the second semiconductor optical device corresponding to difference in the layer thickness of the first semiconductor layer.

What is claimed is: 
     
         1 . An arrayed semiconductor optical device comprising:
 a plurality of semiconductor optical devices including a first semiconductor optical device and a second semiconductor optical device which are monolithically integrated on a semiconductor substrate,   wherein each of the semiconductor optical devices includes a first semiconductor layer having a multiple quantum well layer and a grating layer disposed on an upper side of the first semiconductor layer,   wherein a layer thickness of the first semiconductor layer of the first semiconductor optical device is thinner than a layer thickness of the first semiconductor layer of the second semiconductor optical device, and   wherein a height of the grating layer of the first semiconductor optical device is lower than a height of the grating layer of the second semiconductor optical device corresponding to difference in the layer thickness of the first semiconductor layer.   
     
     
         2 . The arrayed semiconductor optical device according to  claim 1 ,
 wherein the first semiconductor layer of each of the semiconductor optical devices further includes a lower side optical guide layer disposed in contact with a lower side of the multiple quantum well layer and an upper side optical guide layer disposed in contact with an upper side of the multiple quantum well layer.   
     
     
         3 . The arrayed semiconductor optical device according to  claim 2 ,
 wherein the first semiconductor layer of each of the semiconductor optical devices is composed of the lower side optical guide layer, the multiple quantum well layer, and the upper side optical guide layer.   
     
     
         4 . The arrayed semiconductor optical device according to  claim 1 ,
 wherein difference in heights between the grating layer of the first semiconductor optical device and the grating layer of the second semiconductor optical device is substantial difference in the layer thickness of the first semiconductor layer.   
     
     
         5 . The arrayed semiconductor optical device according to  claim 1 ,
 wherein each of the semiconductor optical devices further includes an etching stop layer disposed between the first semiconductor layer and the grating layer.   
     
     
         6 . An optical transmitter module comprising the arrayed semiconductor optical device according to  claim 1 . 
     
     
         7 . An optical module comprising the optical transmitter module according to  claim 6 . 
     
     
         8 . A method for manufacturing an arrayed semiconductor optical device including a plurality of semiconductor optical devices including a first semiconductor optical device and a second semiconductor optical device which are monolithically integrated on a semiconductor substrate, each of the semiconductor optical devices including a first semiconductor layer having a multiple quantum well layer and a grating layer disposed on an upper side of the first semiconductor layer, the method comprising:
 a first semiconductor layer deposition process of simultaneously depositing the first semiconductor layer of the first semiconductor optical device and the first semiconductor layer of the second semiconductor optical device such that a layer thickness of the first semiconductor layer of the first semiconductor optical device is thinner than a layer thickness of the first semiconductor layer of the second semiconductor optical device; and   a grating layer deposition process of simultaneously depositing the grating layer of the first semiconductor optical device and the grating layer of the second semiconductor optical device under common conditions.   
     
     
         9 . The method for manufacturing an arrayed semiconductor optical device according to  claim 8 ,
 wherein, in the first semiconductor layer deposition process, the first semiconductor layer of the first semiconductor optical device and the first semiconductor layer of the second semiconductor optical device are simultaneously deposited by Selective-Area-Growth.