Organometallic compounds useful for chemical phase deposition

Abstract

Organometallic compounds, useful in chemical phase deposition processes, having a structure: [{R 1 R 2 R 3 (A))x-M(CO)y]z, wherein R 1 , R 2 and R 3 are selected from H, a lower alkyl group and a phenyl group substituted with at least one selected lower alkyl group, where at least one of R 1 , R 2 and R 3 must be other than H; M is selected from cobalt, iron, manganese, and chromium group metals; A is selected from Si, Ge, and Sn; wherein: x=1, y=4, and z=1 when M is selected from a cobalt group metal, x=1, y=5, and z=1 when M is selected from a manganese group metal, x=2, y=4, and z=1 when M is selected from a chromium group metal, and x=2, y=4, and z=1 or, alternatively, x=1, y=4, and z=2 when M is selected from an iron group metal.

1 - 58 . (canceled) 
     
     
         59 . An organometallic compound corresponding in structure to Formula 1:
   (R 1 R 2 R 3 (Si))—Co(CO) 4  
   
       wherein R 1 , R 2  and R 3  are independently selected lower alkyl groups, with the proviso that at least two of R1, R2 and R3 are methyl groups. 
     
     
         60 . The compound of  claim 59 , wherein one of R 1 , R 2  and R 3  is a lower alkyl group having from 1 to 4 carbon atoms. 
     
     
         61 . The compound of  claim 59  selected from the group consisting of EtMe 2 SiCo(CO) 4  and  t BuMe 2 SiCo(CO) 4 . 
     
     
         62 . The compound of  claim 59  wherein the compound is  t BuMe 2 SiCo(CO) 4 . 
     
     
         63 . A method for forming a metal-containing film by a vapor deposition process, the method comprising:
 a) providing at least one substrate,   b) delivering to said substrate at least one compound of Formula 1:
   (R 1 R 2 R 3 (Si))—Co(CO) 4  
 
   
       in a gaseous phase,
 c) simultaneously with, or subsequently to, step b), delivering at least one co-reagent in a gaseous phase to said substrate, and 
 d) removing gaseous reaction products. 
 
     
     
         64 . The method of  claim 63 , wherein the compound is selected from the group consisting of EtMe 2 SiCo(CO) 4  and  t BuMe 2 SiCo(CO) 4 . 
     
     
         65 . The method of  claim 64 , wherein the compound is  t BuMe 2 SiCo(CO) 4 . 
     
     
         66 . The method of  claim 63 , wherein the metal-containing film is substantially pure metal and the co-reagent is selected from the group consisting of H 2 , ammonia, a lower alkyl amine, a lower alcohol, hydrazine and a substituted hydrazine. 
     
     
         67 . The method of  claim 66 , wherein the co-reagent is selected from the group consisting of H 2 , ammonia and methanol. 
     
     
         68 . The method of  claim 67 , wherein the co-reagent is a mixture of ammonia and H 2 . 
     
     
         69 . The method of  claim 63 , wherein the metal containing film is metal oxide and the co-reagent is selected from the group consisting of H 2 O, O 2 , O 3 , and a lower alcohol. 
     
     
         70 . The method of  claim 63 , wherein the metal containing film is metal nitride and the co-reagent is selected from the group consisting of ammonia, a lower alkyl amine, hydrazine and a substituted hydrazine. 
     
     
         71 . The method of  claim 63 , wherein the vapor deposition process is a chemical vapor deposition. 
     
     
         72 . The method of  claim 63 , wherein the vapor deposition process is an atomic layer deposition. 
     
     
         73 . A method of selectively depositing a metal-containing film on one or more of a plurality of substrates, the method comprising:
 a) providing at least two substrates comprising different materials, one of said substrate materials having an affinity for Si,   b) delivering at least one compound of Formula 1:
   (R 1 R 2 R 3 (Si))—Co(CO) 4  
 
   
       in a gaseous phase, to said substrates,
 c) simultaneously with, or subsequently to, step b), delivering to said substrate at least one co-reagent in a gaseous phase, and 
 d) removing gaseous reaction products. 
 
     
     
         74 . The method of  claim 73 , wherein the substrate material is SiO 2 . 
     
     
         75 . The method of  claim 74 , wherein the compound of Formula 1 is  t BuMe 2 SiCo(CO) 4 . 
     
     
         76 . The method of  claim 73 , wherein the substrate material is SiN. 
     
     
         77 . The method of  claim 76 , wherein the compound of Formula 1 is  t BuMe 2 SiCo(CO) 4 . 
     
     
         78 . A method of selectively depositing a metal-containing film on one or more of a plurality of substrates, the method comprising:
 a) providing at least two substrates comprising different materials, and one of said substrate materials having an affinity for Co,   b) delivering at least one compound of Formula 1:
   (R 1 R 2 R 3 (Si))—Co(CO) 4  
 
   
       in a gaseous phase, to said substrates,
 c) simultaneously with, or subsequently to, step b), delivering at least one co-reagent in s gaseous phase to said substrate, and 
 d) removing gaseous reaction products. 
 
     
     
         79 . The method of  claim 78 , wherein the substrate material having an affinity is selected from the group consisting of Ni, Pd, Pt, Co, Rh, Ir, Fe, Ru, and Os. 
     
     
         80 . The method of  claim 79 , wherein the metal containing film is Co. 
     
     
         81 . The method of  claim 80  in which the compound of Formula 1 is  t BuMe 2 SiCo(CO) 4 .