Thermoelectric device with internal sensor

Abstract

A thermoelectric system which comprises two substrates spaced apart from each other to form a gap and a plurality of electrically-connected semiconductor elements disposed between the substrates in the gap. The thermoelectric system further comprises at least one sensor and a seal which extends between the substrates and encloses the sensor and at least one of the plurality of semiconductor elements. The sensor is disposed between the substrates at an interior location spaced from the peripheral edge of at least one of the substrates. Additionally, at least one of the semiconductor elements is disposed between the sensor and the peripheral edge.

1 . (canceled) 
     
     
         2 . A thermoelectric device comprising:
 a first substrate and a second substrate spaced apart from each other to form a gap;   a plurality of semiconductor elements disposed between the first and second substrates within the gap, the plurality of semiconductor elements comprising a first group of semiconductor elements having a first set of electrical properties and a second group of semiconductor elements having a second set of electrical properties;   a first set of electrical conductors disposed between the plurality of semiconductor elements and the first substrate and a second set of electrical conductors disposed between the plurality of semiconductor elements and the second substrate, the first set of electrical conductors and the second set of electrical conductors arranged so the plurality of semiconductor elements are electrically coupled to each other in series with the first and second groups of semiconductor elements in an alternating arrangement,   wherein the first group of semiconductor elements comprises N-type semiconductor elements and wherein the second group of semiconductor elements comprises P-type semiconductor elements, each electrical conductor being coupled to at least one N-type semiconductor element and at least one P-type semiconductor element to form a Peltier circuit, and   wherein the first set of electrical conductors are coupled to the first substrate, and the second set of electrical conductors are coupled to the second substrate;   a sensor disposed between the first and second substrates at a location spaced from a peripheral edge of the first substrate or the second substrate, wherein the sensor is located adjacent to at least two semiconductor elements and is located between the first and second substrates; and   a seal extending along at least a part of the peripheral edge of the first or second substrate, the seal extending between the first and second substrates from the peripheral edge of the first or second substrate to the other substrate,   wherein at least a portion of the seal is positioned substantially within the peripheral edge of the first or second substrate,   wherein the plurality of semiconductor elements are arranged so that at least some of the semiconductor elements establish an outer boundary along a periphery of the semiconductor elements,   wherein the plurality of semiconductor elements positioned along the outer boundary surround at least one row of interior semiconductor elements, and   wherein the sensor is disposed adjacent at least one interior semiconductor elements and adjacent at least one semiconductor element positioned along the outer boundary.   
     
     
         3 . The thermoelectric device of  claim 2 , the seal extends in between at least two of the plurality of semiconductor elements. 
     
     
         4 . The thermoelectric device of  claim 2 , wherein the seal is not in contact with the sensor. 
     
     
         5 . The thermoelectric device of  claim 2 , wherein the sensor is located equivalent of at least one row of semiconductor elements away from any portion of the peripheral edge of the first or second substrate. 
     
     
         6 . The thermoelectric device of  claim 2 , wherein the sensor is enclosed by at least one row of semiconductor elements on all sides of the sensor such that the plurality of semiconductor elements surrounds the sensor. 
     
     
         7 . The thermoelectric device of  claim 2 , wherein the sensor is at least one of a temperature sensor, a thermistor, or a thermocouple. 
     
     
         8 . The thermoelectric device of  claim 2 , wherein the sensor is disposed, with respect to the peripheral edge of the first or second substrate, at substantially the center of one of the first and second substrates. 
     
     
         9 . The thermoelectric device of  claim 2 , wherein the seal completely encloses all of the plurality of semiconductor elements positioned between the first and second substrates. 
     
     
         10 . A thermoelectric device comprising:
 a pair of opposing substrates, each substrate having a peripheral edge and a face that generally opposes a face of the other opposing substrate;   a plurality of semiconductor elements are positioned between the opposing faces of the opposing substrates, the plurality of semiconductor elements comprises at least two groups of dissimilar semiconductor elements, the plurality of semiconductor elements electrically coupled in series by conductor elements arranged so the two groups of dissimilar semiconductor elements are connected in an alternating pattern, the conductor elements being coupled to the opposing substrates, to form a Peltier circuit,   wherein at least some of the semiconductor elements form an outer peripheral boundary that defines an interior region within which all remaining semiconductor elements are positioned; and   a sensor positioned between the pair of opposing substrates at a location spaced from the peripheral edges of the opposing substrates, the sensor being disposed within the interior region and between the plurality of semiconductor elements positioned within the interior region,   wherein the sensor is located equivalent of at least one row of semiconductor elements away from any portion of the peripheral edges of the opposing substrates.   
     
     
         11 . The thermoelectric device of  claim 10 , further comprising a seal extending along a side of one of the peripheral edges of the opposing substrates. 
     
     
         12 . The thermoelectric device of  claim 11 , wherein the seal extends at least partly between the opposing substrates. 
     
     
         13 . The thermoelectric device of  claim 11 , wherein the seal extends between at least two of the plurality of semiconductor elements. 
     
     
         14 . The thermoelectric device of  claim 11 , wherein the seal is positioned substantially within the peripheral edges of the opposing substrates. 
     
     
         15 . The thermoelectric device of  claim 10 , wherein the sensor is enclosed by at least one row of semiconductor elements on all sides of the sensor such that the plurality of semiconductor elements surrounds the sensor. 
     
     
         16 . A thermoelectric system comprising:
 a first substrate and a second substrate spaced apart from each other;   a plurality of semiconductor elements disposed between the first and second substrates, the semiconductor elements comprising a plurality of N-type semiconductor elements and a plurality of P-type semiconductor elements;   a first set of conductor tabs disposed between the plurality of semiconductor elements and the first substrate;   a second set of conductor tabs disposed between the plurality of semiconductor elements and the second substrate, the first set of conductor tabs and the second set of conductor tabs being arranged so the plurality of semiconductor elements are electrically coupled to each other in series,   wherein the N-type semiconductor elements and the P-type semiconductor elements are electrically coupled to each in an alternating arrangement,   wherein each conductor tab is coupled to one N-type semiconductor element and one P-type semiconductor element to form a Peltier circuit,   wherein the semiconductor elements are located within an area generally bounded by an outer periphery of the first or second substrate,   wherein the semiconductor elements are either peripheral semiconductor elements or interior semiconductor elements,   wherein the peripheral semiconductor elements comprise semiconductor elements that are oriented along the outer periphery, and   wherein the peripheral semiconductor elements define an interior region, wherein all interior semiconductor elements are positioned within the interior region within the peripheral semiconductor elements; and   a sensor disposed between the first and second substrates at a location within the interior region spaced from the outer periphery equivalent of at least one row of semiconductor elements,   wherein the sensor is positioned adjacent to at least one interior semiconductor element, and   wherein the sensor is generally enclosed from ambient environment.   
     
     
         17 . The thermoelectric system of  claim 16 , wherein the sensor is at least partially enclosed from ambient environment via at least one of a putty, a plastic, an epoxy, or a rubber material. 
     
     
         18 . The thermoelectric system of  claim 17 , wherein the material extends along at least a part of the outer periphery of the first or second substrate. 
     
     
         19 . The thermoelectric system of  claim 18 , wherein the material extends at least partly between the first and second substrates. 
     
     
         20 . The thermoelectric system of  claim 19 , wherein the material comprises a seal extending between the first and second substrates. 
     
     
         21 . The thermoelectric system of  claim 20 , wherein the material extends between at least two of the plurality of semiconductor elements.