Vapor chamber

Abstract

A vapor chamber is provided. The vapor chamber is adapted to be thermally connected to an electronic element. The vapor chamber includes a first member and a second member. The first member has a first heat transfer coefficient. The first member is connected to the electronic element. The second member has a second heat transfer coefficient. The second member is combined with the first member. The first member is located between the second member and the electronic element. The first heat transfer coefficient is greater than the second heat transfer coefficient.

What is claimed is: 
     
         1 . A vapor chamber, adapted to be thermally connected to an electronic element, comprising:
 a first member, having a first heat transfer coefficient, wherein the first member is connected to the electronic element; and   a second member, having a second heat transfer coefficient, wherein the second member is combined with the first member, the first member is located between the second member and the electronic element, and the first heat transfer coefficient is greater than the second heat transfer coefficient.   
     
     
         2 . The vapor chamber as claimed in  claim 1 , wherein the first member is combined with the second member by welding. 
     
     
         3 . The vapor chamber as claimed in  claim 2 , wherein the first member is combined with the second member by laser welding, high-frequency welding, friction welding, or argon arc welding. 
     
     
         4 . The vapor chamber as claimed in  claim 1 , wherein materials of the first and second members are selected from a group consisting of copper, copper alloy, titanium, titanium alloy, aluminum, aluminum alloy, stainless steel, ceramic, graphite and polymeric fiber. 
     
     
         5 . The vapor chamber as claimed in  claim 1 , wherein a flatness of the first member is greater than that of the second member. 
     
     
         6 . A vapor chamber, adapted to be thermally connected to an electronic element, comprising:
 a first member, having a first electronic shielding coefficient, wherein the first member is connected to the electronic element; and   a second member, having a second electronic shielding coefficient, wherein the second member is combined with the first member, the first member is located between the second member and the electronic element, and the second electronic shielding coefficient is greater than the first electronic shielding coefficient.   
     
     
         7 . The vapor chamber as claimed in  claim 6 , wherein the first member is combined with the second member by welding. 
     
     
         8 . The vapor chamber as claimed in  claim 6 , wherein a plurality of capillary structures are formed on an inner surface of the second member, and the capillary structures extend toward the first member. 
     
     
         9 . The vapor chamber as claimed in  claim 6 , wherein the electronic element is disposed on a circuit board, a holding unit is disposed on the circuit board and abuts and restricts the second member, and the holding unit is made of an electrically conductive material. 
     
     
         10 . A vapor chamber, adapted to be thermally connected to an electronic element, comprising:
 a first member, wherein the first member is connected to the electronic element;   a second member, wherein the second member is combined with the first member; and   a media layer, sandwiched between the first and second members, wherein a melting point of the first member and that of the second member are greater than that of the media layer.   
     
     
         11 . The vapor chamber as claimed in  claim 10 , wherein a hardness of the first member and that of the second member are greater than that of the media layer. 
     
     
         12 . The vapor chamber as claimed in  claim 10 , wherein a strength of the first member and that of the second member are greater than that of the media layer. 
     
     
         13 . The vapor chamber as claimed in  claim 11 , wherein the media layer is formed between the first and second members by plating or sputtering. 
     
     
         14 . The vapor chamber as claimed in  claim 11 , wherein the media layer is formed between the first and second members by hot pressing. 
     
     
         15 . The vapor chamber as claimed in  claim 11 , wherein the media layer has no adhesion in room temperature. 
     
     
         16 . The vapor chamber as claimed in  claim 11 , wherein the melting point of the first member and that of the second member are greater than 500° C. 
     
     
         17 . The vapor chamber as claimed in  claim 11 , wherein a wall thickness of the first member and that of the second member are less than 0.2 mm. 
     
     
         18 . The vapor chamber as claimed in  claim 11 , wherein materials of the first and second members are selected from a group consisting of copper, copper alloy, titanium, titanium alloy, aluminum, aluminum alloy, stainless steel, ceramic, graphite and polymeric fiber. 
     
     
         19 . The vapor chamber as claimed in  claim 18 , wherein a material of the media layer is selected from a group consisting of copper, copper alloy, titanium, titanium alloy, aluminum, aluminum alloy and stainless steel. 
     
     
         20 . The vapor chamber as claimed in  claim 11 , further comprising a porous material, and the porous material is disposed in a chamber formed by the first and second members.