US2018226311A1PendingUtilityA1

Supporting glass substrate, laminate, semiconductor package, electronic device, and method of manufacturing semiconductor package

Assignee: NIPPON ELECTRIC GLASS COPriority: Sep 25, 2014Filed: Jun 5, 2015Published: Aug 9, 2018
Est. expirySep 25, 2034(~8.1 yrs left)· nominal 20-yr term from priority
Inventors:Hiroki Katayama
H10W 72/9413H10W 72/241H10W 74/019H10W 74/014H10W 74/01H10W 72/0198H10W 70/60H10W 70/09H10W 70/692C03C 3/093B24B 37/07B32B 2457/14B32B 17/06B32B 2307/538C03C 19/00C03C 3/091H01L 2224/12105H01L 2224/04105H01L 23/15H01L 21/56H01L 24/19C03B 17/064Y02P40/57B24B 37/08
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Claims

Abstract

Devised are a supporting substrate capable of contributing to an increase in density of a semiconductor package and a laminate using the supporting substrate. A supporting glass substrate of the present invention includes a polished surface on a surface thereof and has a total thickness variation of less than 2.0 μm.

Claims

exact text as granted — not AI-modified
1 . A supporting glass substrate, comprising a polished surface on a surface thereof and having a total thickness variation of less than 5.0 μm. 
     
     
         2 . The supporting glass substrate according to  claim 1 , wherein the supporting glass substrate has a total thickness variation of less than 2.0 μm. 
     
     
         3 . The supporting glass substrate according to  claim 1 , wherein the supporting glass substrate has a warpage level of 60 μm or less. 
     
     
         4 . A supporting glass substrate, comprising a polished surface on a surface thereof and having a total thickness variation of less than 2.0 μm, wherein the supporting glass substrate is formed by an overflow down-draw method. 
     
     
         5 . The supporting glass substrate according to  claim 1 , wherein the supporting glass substrate is used for supporting a processed substrate in a manufacturing process for a semiconductor package. 
     
     
         6 . The supporting glass substrate according to  claim 1 , wherein the supporting glass substrate has a Young's modulus of 65 GPa or more. 
     
     
         7 . A laminate, comprising at least a processed substrate and a supporting glass substrate configured to support the processed substrate, the supporting glass substrate comprising the supporting glass substrate of  claim 1 . 
     
     
         8 . The laminate according to  claim 7 , wherein the processed substrate comprises at least a semiconductor chip molded with a sealing material. 
     
     
         9 . A method of manufacturing a semiconductor package, comprising the steps of:
 preparing a laminate comprising at least a processed substrate and a supporting glass substrate configured to support the processed substrate;   conveying the laminate; and   subjecting the processed substrate to processing treatment, the supporting glass substrate comprising the supporting glass substrate of  claim 1 .   
     
     
         10 . The method of manufacturing a semiconductor package according to  claim 9 , wherein the processing treatment comprises a step of arranging wiring on one surface of the processed substrate. 
     
     
         11 . The method of manufacturing a semiconductor package according to  claim 9 , wherein the processing treatment comprises a step of forming a solder bump on one surface of the processed substrate. 
     
     
         12 . A semiconductor package, which is manufactured by the method of manufacturing a semiconductor package of  claim 9 . 
     
     
         13 . An electronic device, comprising a semiconductor package, wherein the semiconductor package comprises the semiconductor package of  claim 12 . 
     
     
         14 . The supporting glass substrate according to  claim 4 , wherein the supporting glass substrate is used for supporting a processed substrate in a manufacturing process for a semiconductor package. 
     
     
         15 . The supporting glass substrate according to  claim 4 , wherein the supporting glass substrate has a Young's modulus of 65 GPa or more. 
     
     
         16 . A laminate, comprising at least a processed substrate and a supporting glass substrate configured to support the processed substrate, the supporting glass substrate comprising the supporting glass substrate of  claim 4 . 
     
     
         17 . A method of manufacturing a semiconductor package, comprising the steps of:
 preparing a laminate comprising at least a processed substrate and a supporting glass substrate configured to support the processed substrate;   conveying the laminate; and   subjecting the processed substrate to processing treatment,   the supporting glass substrate comprising the supporting glass substrate of  claim 4 .

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