Semiconductor device and manufacturing method for same, crystal, and manufacturing method for same

Abstract

A semiconductor device or a crystal that suppresses phase transition of a corundum structured oxide crystal at high temperatures is provided. According to the present invention, a semiconductor device or a crystal structure is provided, including a corundum structured oxide crystal containing one or both of indium atoms and gallium atoms, wherein the oxide crystal contains aluminum atoms at least in interstices between lattice points of a crystal lattice.

The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows: 
     
         1 . A semiconductor device comprising:
 a film comprising a corundum structure; and   a film comprising a hexagonal crystal structure and arranged directly or via a buffer layer on the film comprising the corundum structure.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the film comprising the corundum structure comprises gallium atoms. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the film comprising the corundum structure comprises indium atoms. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the film comprising the corundum structure is an oxide crystal layer. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the film comprising the corundum structure comprises α-gallium oxide. 
     
     
         6 . The semiconductor device of  claim 1 , wherein the film comprising the hexagonal crystal structure is a group III nitride crystal layer. 
     
     
         7 . The semiconductor device of  claim 6 , wherein the group III nitride crystal layer is oriented to one axis. 
     
     
         8 . The semiconductor device of  claim 1 , wherein the film comprising the hexagonal crystal structure comprises a gallium nitride crystal. 
     
     
         9 . The semiconductor device of  claim 1 , wherein the buffer layer on the film comprising the corundum structure is an iron oxide layer. 
     
     
         10 . The semiconductor device of  claim 9 , wherein the buffer layer on the film comprising the corundum structure is the iron oxide layer in an amorphous phase. 
     
     
         11 . The semiconductor device of  claim 1 ,
 wherein the film comprising the corundum structure is defined as a first film, and   the film comprising the hexagonal crystal structure is defined as a second film, and   wherein the semiconductor device further comprises a third film that is a group III nitride crystal layer, and   the first film is sandwiched by the second film and the third film.   
     
     
         12 . The semiconductor device of  claim 11 , wherein the first film is an oxide crystal layer. 
     
     
         13 . The semiconductor device of  claim 11 , wherein the second film is a group III nitride crystal layer. 
     
     
         14 . The semiconductor device of  claim 11 , wherein the third film comprises indium atoms. 
     
     
         15 . The semiconductor device of  claim 11 , wherein the third film comprises gallium atoms. 
     
     
         16 . The semiconductor device of  claim 12 , wherein the oxide crystal layer comprises gallium atoms and aluminum atoms. 
     
     
         17 . The semiconductor device of  claim 16 , wherein the aluminum atoms are at least in interstices of a crystal lattice of the oxide crystal layer. 
     
     
         18 . The semiconductor device of  claim 12 , wherein the oxide crystal layer comprises indium atoms and aluminum atoms. 
     
     
         19 . The semiconductor device of  claim 18 , wherein the aluminum atoms are at least in interstices of a crystal lattice of the oxide crystal layer. 
     
     
         20 . A semiconductor device comprising:
 an α-gallium oxide film; and   a gallium nitride layer arranged on the α-gallium oxide film.