Light emitting diode and light emitting device including the same

Abstract

Disclosed herein is a light emitting device. The light emitting device is provided to include a light emitting structure, a first electrode pad, a second electrode pad and a heat dissipation pad, and a substrate on which the light emitting diode is mounted. The substrate includes a base; an insulation pattern formed on the base; and a conductive pattern disposed on the insulation pattern. The base includes a post and a groove separating the post from the conductive pattern. An upper surface of the post is placed lower than an upper surface of the conductive pattern, the heat dissipation pad contacts the upper surface of the post, and the first electrode pad and the second electrode pad contact the conductive pattern. With this structure, the light emitting device has excellent properties in terms of electrical stability and heat dissipation efficiency.

What is claimed is: 
     
         1 . A light emitting device comprising:
 a light emitting structure comprising a light emitting diode region, and a protective diode region connected to the light emitting diode region and including a first semiconductor layer, each of the light emitting diode region further including an active layer formed over the first semiconductor layer and a second semiconductor layer formed over the active layer, wherein the first semiconductor layer of the light emitting diode region is electrically connected to the second semiconductor layer of the protective diode region; and   a lens disposed over the light emitting structure and including:
 a first circumference providing a lower concave section with a light incident face on which light emitted from the light emitting diode chip is incident; and 
 a second circumference providing an upper concave section and structured to discharge the light, 
   wherein the light emitting structure is disposed under the lower concave section or within the lower concave section, and the protective diode region of the light emitting diode chip is disposed under the upper concave section.   
     
     
         2 . The light emitting device of  claim 1 ,
 wherein the protective diode region is disposed at a center of the light emitting diode chip, and   wherein the upper concave section is disposed at a center of the upper surface.   
     
     
         3 . The light emitting device of  claim 2 , wherein the center of the upper concave section and the protective diode region are aligned on a central axis of the lens. 
     
     
         4 . The light emitting device of  claim 1 , wherein the active layer and the second semiconductor layer of the light emitting diode region form a first mesa and the active layer and the second semiconductor layer of the protective diode region form a second mesa. 
     
     
         5 . The light emitting device of  claim 1 , wherein the second conductive type semiconductor layer of the light emitting diode region is electrically connected to the first conductive type semiconductor layer of the protective diode region. 
     
     
         6 . The light emitting device of  claim 4 , wherein the light emitting diode structure further comprises:
 a second electrode disposed on the first mesa and the second mesa;   a first insulation layer covering the second electrode, the light emitting diode region, and the protective diode region, and including a first opening which partially exposes the first semiconductor layer of the light emitting diode region and the protective diode region and a second opening which partially exposes the second electrode;   a first electrode at least partially covering the first insulation layer, electrically connected to the first semiconductor layer through the first opening, and electrically connected to the second electrode of the protective diode region through the second opening; and   a connection electrode electrically connected to the first semiconductor layer of the protective diode region through the first opening, and electrically connected to the second electrode of the light emitting diode region through the second opening.   
     
     
         7 . The light emitting device of  claim 6 , wherein the protective diode region is surrounded by the light emitting diode region. 
     
     
         8 . The light emitting device of  claim 6 , wherein the first opening exposing the first semiconductor layer of the light emitting diode region is formed along an outer periphery of the light emitting diode structure. 
     
     
         9 . The light emitting device of  claim 8 , wherein the first opening exposing the first semiconductor layer of the light emitting diode region extends toward the protective diode region from the outer periphery of the light emitting diode structure. 
     
     
         10 . The light emitting device of  claim 6 , wherein the light emitting diode chip further comprises:
 a second insulation layer at least partially covering the first electrode, the connection electrode and the first insulation layer, and comprising a third opening and fourth opening exposing the first electrode and the connection electrode, respectively.   
     
     
         11 . The light emitting device of  claim 10 , further comprising a substrate on which the light emitting diode chip is mounted, the substrate comprising leads,
 wherein the first electrode electrically is electrically connected one of the leads through the third opening, and   wherein the connection electrode is electrically connected to another one of the leads.   
     
     
         12 . The light emitting device of  claim 11 , further comprising a solder to bond the first electrode and the connection electrode to the leads. 
     
     
         13 . The light emitting device of  claim 10 , wherein the light emitting diode chip further comprises:
 a first electrode pad electrically connected to the first electrode through the third opening, and   a second electrode pad electrically connected to the connection electrode through the fourth opening.   
     
     
         14 . The light emitting device of  claim 13 , wherein the light emitting diode chip further comprises a heat dissipation pad disposed on the second insulation layer,
 wherein the heat dissipation pad is disposed between the first electrode pad and the second electrode pad.   
     
     
         15 . The light emitting device of  claim 1 , wherein the lower concave section has a shape having a width gradually decreasing in a direction away from the light emitting diode structure. 
     
     
         16 . The light emitting device of  claim 15 , wherein a vertical cross-section of the lower concave section has a truncated shape. 
     
     
         17 . The light emitting device of  claim 1 , wherein the upper surface of the lens has a curved shape. 
     
     
         18 . The light emitting device of  claim 1 , wherein the upper surface has an inclination which rate increases from a center of the upper concave section to a point on the upper surface. 
     
     
         19 . The light emitting device of  claim 1 , wherein the lens further comprises a flange disposed between the upper surface and the lower surface. 
     
     
         20 . The light emitting device of  claim 1 , further comprising:
 a substrate on which the light emitting diode chip is mounted, and   a reflective sheet disposed on the substrate, and covering a side surface of the light emitting diode structure.   
     
     
         21 . A light emitting device comprising:
 a light emitting diode region including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers; and   a protective diode region including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers and connected to the light emitting diode region such that the first semiconductor layer of the light emitting diode region is electrically connected to the second semiconductor layer of the protective diode region,   wherein the protective diode region is disposed at a center of the light emitting diode device.   
     
     
         22 . The light emitting diode chip of  claim 21 , wherein the active layer and the second semiconductor layer of the light emitting diode region form a first mesa and the active layer and the second semiconductor layer of the protective diode region form a second mesa. 
     
     
         23 . The light emitting diode chip of  claim 22 , further comprising:
 a second electrode disposed on the first mesa and the second mesa;   a first insulation layer covering the second electrode, the light emitting diode region, and the protective diode region, and comprising a first opening which partially exposes the first semiconductor layers of the light emitting diode region and the protective diode region and a second opening which partially exposes the second electrode;   a first electrode at least partially covering the first insulation layer, electrically connected to the first semiconductor layer of the light emitting diode region through the first opening, and electrically connected to the second electrode of the protective diode region through the second opening; and   a connection electrode electrically connected to the first semiconductor layer of the protective diode region through the first opening, and electrically connected to the second electrode of the light emitting diode region through the second opening.   
     
     
         24 . The light emitting diode chip of  claim 21 , wherein the protective diode region is surrounded by the light emitting diode region. 
     
     
         25 . The light emitting diode chip of  claim 23 , wherein the first opening exposing the first conductive type semiconductor layer of the light emitting diode region is disposed along an outer periphery of the light emitting diode structure. 
     
     
         26 . The light emitting device of  claim 25 , wherein the first opening exposing the first semiconductor layer of the light emitting diode region extends toward the protective diode region from the outer periphery of the light emitting diode structure. 
     
     
         27 . The light emitting diode chip of  claim 23 , further comprising:
 a second insulation layer at least partially covering the first electrode, the connection electrode and the first insulation layer, and comprising a third opening and fourth opening exposing the first electrode and the connection electrode, respectively.   
     
     
         28 . The light emitting diode chip of  claim 27 , further comprising:
 a first electrode pad electrically connected to the first electrode through the third opening, and   a second electrode pad electrically connected to the connection electrode through the fourth opening.   
     
     
         29 . The light emitting diode chip of  claim 27 , further comprising:
 a heat dissipation pad disposed on the second insulation layer,   wherein the heat dissipation pad is disposed between the first electrode pad and the second electrode pad.