US2018227522A1PendingUtilityA1
Active reset circuit for reset spread reduction in single-slope adc
Est. expiryJun 30, 2036(~9.9 yrs left)· nominal 20-yr term from priority
H04N 25/65H04N 25/616H04N 25/772H04N 25/771H04N 25/76H04N 5/376H04N 5/37455H04N 5/37452H04N 5/378H04N 25/78H04N 25/779H04N 25/57H04N 25/77
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Claims
Abstract
An image sensor comprises a pixel circuit including a reset transistor and configured to output a pixel signal; and a differential comparator including a pixel input, a reference input, and a comparator output, wherein one of a source or a drain of the reset transistor is connected to the comparator output. In this manner, an active reset method may be incorporated in the image sensor.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . An image sensor, comprising:
a pixel circuit including a reset transistor and an amplification transistor, the pixel circuit configured to output a pixel signal; an amplifier including a pixel input and an amplifier output; a capacitor connected to one of a source or a drain of the reset transistor and to the amplification transistor; a first signal line connected to the pixel circuit and to the amplifier; and a second signal line connected to the other of the source or the drain of the reset transistor and to the amplifier output.
2 . The image sensor according to claim 1 , wherein the capacitor is connected to a gate of the amplification transistor.
3 . The image sensor according to claim 2 , wherein the amplifier is configured to receive the pixel signal at the pixel input and to receive a reference signal at a reference input.
4 . The image sensor according to claim 1 , further comprising a correlated double sampling (CDS) circuit, wherein:
the CDS circuit is configured to perform a P-phase measurement corresponding to a reset level of the pixel circuit, and the CDS circuit is configured to subsequently perform a D-phase measurement corresponding to a data level of the pixel circuit.
5 . The image sensor according to claim 4 , wherein the CDS circuit is configured to calculate a difference between the P-phase measurement and the D-phase measurement.
6 . The image sensor according to claim 1 , wherein a gate of the reset transistor is configured to receive a high reset level, an intermediate reset level, and a low reset level in this order.
7 . The image sensor according to claim 6 , wherein the high reset level and the intermediate reset level are higher than a gate threshold of the reset transistor, and the low reset level is lower than the gate threshold of the reset transistor.
8 . The image sensor according to claim 1 , wherein the pixel circuit further includes a photodiode and a transfer transistor.
9 . The image sensor according to claim 8 , wherein the pixel circuit further includes a selection transistor.
10 . The image sensor according to claim 1 , wherein
the pixel circuit is one of a plurality of pixel circuits arranged in a matrix, and the amplifier corresponds to a plurality of columns of the matrix.
11 . An image processing method, comprising:
outputting a pixel signal via a first signal line from a pixel circuit, the pixel circuit including a reset transistor, an amplification transistor, and a capacitor connected to one of a source or a drain of the reset transistor and to the amplification transistor; and outputting an amplifier signal via a second signal line from an amplifier, the amplifier including a pixel input and an amplifier output, wherein the second signal line is connected to the other of the source or the drain of the reset transistor.
12 . The image processing method according to claim 11 , wherein the capacitor is connected to a gate of the amplification transistor.
13 . The image processing method according to claim 12 , further comprising receiving the pixel signal at the pixel input and to receiving a reference signal at a reference input of the amplifier.
14 . The image processing method according to claim 11 , further comprising:
performing a P-phase measurement corresponding to a reset level of the pixel circuit; and thereafter performing a D-phase measurement corresponding to a data level of the pixel circuit.
15 . The image processing method according to claim 14 , further comprising calculating a difference between the P-phase measurement and the D-phase measurement.
16 . The image processing method according to claim 11 , further comprising:
receiving, at a gate of the reset transistor, a high reset level, an intermediate reset level, and a low reset level in this order.
17 . The image processing method according to claim 16 , wherein the high reset level and the intermediate reset level are higher than a gate threshold of the reset transistor, and the low reset level is lower than the gate threshold of the reset transistor.
18 . The image processing method according to claim 11 , wherein the pixel circuit further includes a photodiode and a transfer transistor.
19 . The image processing method according to claim 18 , wherein the pixel circuit further includes a selection transistor.
20 . The image processing method according to claim 11 , wherein
the pixel circuit is one of a plurality of pixel circuits arranged in a matrix, and the amplifier corresponds to a plurality of columns of the matrix.Join the waitlist — get patent alerts
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