Electroless plating method and product obtained

Abstract

The present invention relates to an electroless plating method, in which electroless plating is performed by contacting a substrate which is patterned with an anti-electroless plating coating with an electroless plating solution, whereby metal is deposited by electroless plating onto portions of the substrate that are not patterned with the anti-electroless plating coating, the anti-electroless plating coating having multiple layers, each of which is obtainable by plasma deposition of a precursor mixture comprising (a) one or more organosilicon compounds, (b) optionally O 2 , N 2 O, NO 2 , H 2 , NH 3 , N 2 , SiF 4 and/or hexafluoropropylene (HFP), and (c) optionally He, Ar and/or Kr.

1 . An electroless plating method, in which electroless plating is performed by contacting a substrate which is patterned with an anti-electroless plating coating with an electroless plating solution, whereby metal is deposited by electroless plating onto portions of the substrate that are not patterned with the anti-electroless plating coating,
 the anti-electroless plating coating having multiple layers, each of which is obtainable by plasma deposition of a precursor mixture comprising (a) one or more organosilicon compounds, (b) optionally O 2 , N 2 O, NO 2 , H 2 , NH 3 , N 2 , SiF 4  and/or hexafluoropropylene (HFP), and (c) optionally He, Ar and/or Kr.   
     
     
         2 . The method according to  claim 1 , wherein the anti-electroless plating coating has two to ten layers, preferably four to eight layers. 
     
     
         3 . The method according to  claim 1  or  2 , wherein the plasma deposition is plasma enhanced chemical vapour deposition (PECVD). 
     
     
         4 . The method according to any one of the preceding claims, wherein the plasma deposition occurs at a pressure of 0.001 to 10 mbar. 
     
     
         5 . The method according to any one of the preceding claims, wherein the first/lowest layer of the anti-electroless plating coating, which is in contact with the substrate, is organic. 
     
     
         6 . The method according to  claim 5 , wherein the first/lowest layer of the anti-electroless plating coating is obtainable by plasma deposition of a precursor mixture containing no, or substantially no, O 2 , N 2 O or NO 2 . 
     
     
         7 . The method according to  claim 6 , wherein the first/lowest layer of the anti-electroless plating coating is obtainable by plasma deposition of a precursor mixture containing no, or substantially no, O 2 , N 2 O, NO 2 , fluorine-containing organosilicon compound, SiF 4  or HFP. 
     
     
         8 . The method according to any one of the preceding claims, wherein the final/uppermost layer of the anti-electroless plating coating is obtainable by plasma deposition of a precursor mixture containing no, or substantially no, O 2 , N 2 O or NO 2 . 
     
     
         9 . The method according to any one of the preceding claims, wherein the final/uppermost layer of the anti-electroless plating coating is obtainable by plasma deposition of a precursor mixture comprising one or more halogen-containing organosilicon compounds, SiF 4  and/or HFP. 
     
     
         10 . The method according to any one of the preceding claims, wherein the final/uppermost layer of the multi anti-electroless plating coating is obtainable by plasma deposition of a precursor mixture comprising He, Ar and/or Kr. 
     
     
         11 . The method according to any one of the preceding claims, wherein at least one layer of the anti-electroless plating coating is a moisture barrier layer obtainable by plasma deposition of a precursor mixture comprising O 2 , N 2 O and/or NO 2    
     
     
         12 . The method according to any one of the preceding claims, wherein at least one layer of the anti-electroless plating coating is a moisture barrier layer obtainable by plasma deposition of a precursor mixture comprising a nitrogen-containing organosilicon compound, N 2 , NO 2 , N 2 O and/or NH 3 . 
     
     
         13 . The method assembly according to  claim 11  or  12 , wherein the precursor mixture from which the at least one moisture barrier layer is obtainable further comprises He, Ar and/or Kr. 
     
     
         14 . The method according to any one of  claims 11  to  13 , wherein the at least one moisture barrier is located between the first/lowest layer and the final/uppermost layer of the anti-electroless plating coating. 
     
     
         15 . The method according to any one of the preceding claims, wherein the one or more organosilicon compounds from which each layer of the anti-electroless plating coating is obtainable by plasma deposition is independently selected from hexamethyldisiloxane (HMDSO), tetramethyldisiloxane (TMDSO), 1,3-divinyltetramethyldisiloxane (DVTMDSO), hexavinyldisiloxane (HVDSO) allyltrimethylsilane, allyltrimethoxysilane (ATMOS), tetraethylorthosilicate (TEOS), trimethylsilane (TMS), triisopropylsilane (TiPS), trivinyl-trimethyl-cyclotrisiloxane (V 3 D 3 ), tetravinyl-tetramethyl-cyclotetrasiloxane (V 4 D 4 ), tetramethylcyclotetrasiloxane (TMCS), octamethylcyclotetrasiloxane (OMCTS), hexamethyldisilazane (HMDSN), 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane, dimethylamino-trimethylsilane (DMATMS), bis(dimethylamino)dimethylsilane, (BDMADMS), tris(dimethylamino)methylsilane (TDMAMS), trimethyl(trifluoromethyl)silane or 1H,1H,2H,2H-perfluorooctyltriethoxysilane, 3-(Diethylamino)propyl-trimethoxysilane. 
     
     
         16 . The method according to any one of the preceding claims, in which the anti-electroless plating coating is removed after electroless plating has been performed. 
     
     
         17 . The method according to  claim 16 , wherein the anti-electroless plating coating is removed by plasma etching. 
     
     
         18 . A plated substrate obtainable by the method as defined in any one of  claims 1  to  17 . 
     
     
         19 . A plated substrate, which substrate is patterned with an anti-electroless plating coating as defined in any one of  claims 1  to  15 , and which substrate is plated with metal in areas of the substrate that are not patterned with the anti-electroless plating coating. 
     
     
         20 . A substrate for electroless plating, which substrate is patterned with an anti-electroless plating coating as defined in any one of  claims 1  to  15 . 
     
     
         21 . A method for producing a substrate patterned with an anti-electroless plating coating, which method comprises selectively depositing an anti-electroless plating coating as defined in any one of  claims 1  to  15  onto the substrate.