Memristor and method of production thereof

Abstract

A device is disclosed which comprises a first electrode (101), a second electrode (104) spaced from the first electrode, a switching region (102) positioned between the first electrode and the second electrode, and an intermediate region (103) positioned between the switching region and the second electrode, wherein the intermediate region is in electrical contact with the switching region and the second electrode. Preferably, the intermediate region comprises metal nanowires (105) in a polymer matrix, and the device is a memristor or a memcapacitor. In the latter case, the switching region comprises a conductive material (106) and an insulating material (107).

1 - 28 . (canceled) 
     
     
         29 . A device, comprising:
 a first electrode;   a second electrode spaced from the first electrode;   a switching region positioned between the first electrode and the second electrode, the switching region comprising one or more materials; and   an intermediate region positioned between the switching region and the second electrode, wherein the intermediate region is in electrical contact with the switching region and the second electrode;
 wherein the switching region comprises a conductive material and an insulating material, and wherein the device is a variable capacitance device. 
   
     
     
         30 . The device of  claim 29 , wherein the device is a memristor. 
     
     
         31 . The device of  claim 29 , wherein the switching region is in electrical contact with the first electrode via physical contact with the first electrode, and in electrical contact with the second electrode via physical contact with the intermediate region. 
     
     
         32 . The device of  claim 29 , wherein the switching region has a thickness between 10 and 1000 nanometers. 
     
     
         33 . The device of  claim 29 , wherein the intermediate region comprises: metal nanowires, polymers or a combination thereof. 
     
     
         34 . The device of  claim 29 , wherein the intermediate region is in electrical contact with the second electrode and with the switching region via one or more electrical contact points. 
     
     
         35 . The device of  claim 29 , wherein the elements of the device are arranged to form a vertical stack. 
     
     
         36 . The device of  claim 29 , wherein the insulating material is positioned in the switching region so that at least part of the insulating material is in physical contact with the intermediate region. 
     
     
         37 . The device of  claim 29 , wherein the insulating material comprises a material selected from the group of: insulating transition metal dichalcogenides, transition metal oxides and graphene-like materials. 
     
     
         38 . The device of  claim 29 , wherein the conductive material comprises a material selected from the group of: conductive transition metal dichalcogenides, transition metal oxides and graphene-like materials. 
     
     
         39 . The device of  claim 29 , wherein the switching region is partially oxidized, and wherein the oxidized part of the switching region comprises the insulating material, and the remaining part of the switching region comprises the conductive material. 
     
     
         40 . The device of  claim 39 , wherein the oxidized part of the switching region is at least partially in physical contact with the intermediate region. 
     
     
         41 . The device of  claim 29 , wherein the intermediate region comprises nanowires embedded in an organic material. 
     
     
         42 . The device of  claim 41 , wherein the intermediate region is in electrical contact with the second electrode and with the insulating material of the switching region via one or more electrical contact points. 
     
     
         43 . The device of  claim 29 , wherein the elements of the device are arranged to form a vertical stack. 
     
     
         44 . A method, comprising:
 providing a first electrode;   depositing on the first electrode a switching region comprising one or more materials;   depositing on the switching region an intermediate region comprising metal nanowires and/or polymers; and   depositing on the intermediate region a second electrode;
 wherein depositing the switching region comprises depositing on the first electrode a conductive material and depositing on the conductive material an insulating material. 
   
     
     
         45 . The method of  claim 44 , further comprising providing a substrate, wherein the first electrode is provided by depositing said first electrode on the substrate. 
     
     
         46 . The method of  claim 44 , wherein the intermediate region comprising metal nanowires and/or polymers is deposited on the switching region by dispensing, drop-casting, screen printing, offset printing, gravure printing, flexography, inkjet printing, and the similar techniques. 
     
     
         47 . The method of  claim 44 , wherein the first and second electrodes are deposited by at least one of the following deposition techniques: sputtering, chemical vapor deposition (CVD), physical vapor deposition (PVD) and printing. 
     
     
         48 . An apparatus, comprising:
 at least one processor;   at least one memory coupled to the at least one processor, the at least one memory comprising program code instructions which, when executed by the at least one processor, cause the apparatus to:   provide a first electrode;   deposit on the first electrode a switching region comprising one or more materials;   deposit on the switching region an intermediate region comprising metal nanowires and/or polymers; and deposit on the intermediate region a second electrode;
 wherein depositing the switching region comprises depositing on the first electrode a conductive material and depositing on the conductive material an insulating material.