Semiconductor light emitting device

Abstract

A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.

What is claimed is: 
     
         1 . A semiconductor light emitting device comprising:
 a light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first through hole being formed inside the light emitting structure;   an etch stop layer disposed on a top surface of the second conductivity type semiconductor layer of the light emitting structure, the etch stop layer comprising a second through hole communicating with the first through hole;   a current spreading layer disposed on top surfaces of the second conductivity type semiconductor layer of the light emitting structure and the etch stop layer;   a first electrode structure on a bottom surface of the first conductivity type semiconductor layer and electrically connected to the first conductivity type semiconductor layer;   a second electrode structure on the bottom surface of the first conductivity type semiconductor layer and electrically connected to the current spreading layer through the first through hole and the second through hole;   a transparent adhesive layer on the current spreading layer; and   a transparent support substrate adhered onto the transparent adhesive layer.   
     
     
         2 . The semiconductor light emitting device of  claim 1 , wherein the first conductivity type semiconductor layer comprises an n-type semiconductor layer, and the second conductivity type semiconductor layer comprises a p-type semiconductor layer. 
     
     
         3 . The semiconductor light emitting device of  claim 1 , further comprising a graded index layer having a predetermined refractive index and disposed between the current spreading layer and the transparent adhesive layer. 
     
     
         4 . The semiconductor light emitting device of  claim 3 , wherein the graded index layer comprises a multilayer structure of a titanium oxide (TiO 2 ) layer and a silicon oxide (SiO 2 ) layer. 
     
     
         5 . The semiconductor light emitting device of  claim 3 , wherein the graded index layer comprises an obliquely deposited indium tin oxide (ITO) layer on a top surface of the current spreading layer. 
     
     
         6 . The semiconductor light emitting device of  claim 1 , wherein the transparent adhesive layer has a refractive index between a refractive index of the first conductivity-type semiconductor layer and a refractive index of the transparent support substrate. 
     
     
         7 . The semiconductor light emitting device of  claim 1 , wherein the transparent adhesive layer comprises a wavelength conversion material converting at least a portion of light having a first wavelength and generated by the active layer into light having a second wavelength. 
     
     
         8 . The semiconductor light emitting device of  claim 1 , further comprising a reflective layer disposed on internal walls of the first through hole and the second through hole and a bottom surface of the first conductivity type semiconductor layer. 
     
     
         9 . The semiconductor light emitting device of  claim 1 , wherein the first electrode structure comprises a first contact layer on the bottom surface of the first conductivity type semiconductor layer, and the second electrode structure comprises a second contact layer in the second through hole. 
     
     
         10 . The semiconductor light emitting device of  claim 1 , wherein the transparent support substrate is provided with a concave/convex structure, the concave/convex structure being formed on a top surface of the transparent support substrate. 
     
     
         11 . The semiconductor light emitting device of  claim 1 , wherein the transparent support substrate has a semispherical shape. 
     
     
         12 . The semiconductor light emitting device of  claim 1 , further comprising a wavelength conversion layer disposed between the transparent adhesive layer and the transparent support substrate and converting at least a portion of light having a first wavelength and generated by the active layer into light having a second wavelength. 
     
     
         13 . The semiconductor light emitting device of  claim 1 , further comprising a wavelength conversion layer disposed on a surface of the transparent support substrate and containing a wavelength conversion material converting at least a portion of light having a first wavelength and generated by the active layer into light having a second wavelength. 
     
     
         14 . A semiconductor light emitting device comprising:
 a light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first through hole being formed inside the light emitting structure;   an etch stop layer disposed on a top surface of the second conductivity type semiconductor layer of the light emitting structure, the etch stop layer comprising a second through hole communicating with the first through hole;   a current spreading layer disposed on top surfaces of the second conductivity type semiconductor layer of the light emitting structure and the etch stop layer to cover the second through hole;   a first electrode structure on a bottom surface of the first conductivity type semiconductor layer and electrically connected to the first conductivity type semiconductor layer;   a second electrode structure on the bottom surface of the first conductivity type semiconductor layer and electrically connected to the current spreading layer through the first through hole and the second through hole;   a transparent adhesive layer on the current spreading layer; and   a transparent support substrate adhered onto the transparent adhesive layer,   wherein at least one of the transparent support substrate and the transparent adhesive layer comprises a wavelength conversion material converting at least a portion of light having a first wavelength and generated by the active layer into light having a second wavelength.   
     
     
         15 . The semiconductor light emitting device of  claim 14 , wherein the transparent adhesive layer has a refractive index between a refractive index of the first conductivity-type semiconductor layer and a refractive index of the transparent support substrate. 
     
     
         16 . The semiconductor light emitting device of  claim 15 , wherein the transparent adhesive layer has a refractive index higher than a refractive index of the current spreading layer. 
     
     
         17 . The semiconductor light emitting device of  claim 1 , wherein the transparent adhesive layer comprises a first wavelength conversion material converting at least a portion of light having a first wavelength and generated by the active layer into light having a second wavelength, and
 wherein the transparent support comprises a second wavelength conversion material converting at least a portion of light having a first wavelength and generated by the active layer into light having a third wavelength   
     
     
         18 . The semiconductor light emitting device of  claim 14 , further comprising an optical filter layer disposed on a surface of the transparent support substrate, and blocking light having the first wavelength and allowing light having the second wavelength to be transmitted therethrough. 
     
     
         19 . The semiconductor light emitting device of  claim 18 , further comprising a color filter layer disposed on the optical filter layer and allowing light partially within a wavelength band of the second wavelength to be selectively transmitted therethrough. 
     
     
         20 . The semiconductor light emitting device of  claim 19 , further comprising a light diffusion layer disposed on the color filter layer and diffusing light emitted from the color filter layer. 
     
     
         21 . The semiconductor light emitting device of  claim 14 , wherein the transparent adhesive layer comprises at least one material selected from the group consisting of polyacrylate, polyimide, polyamide, and benzocyclobutene (BCB). 
     
     
         22 . The semiconductor light emitting device of  claim 14 , wherein the transparent support substrate comprises a glass substrate. 
     
     
         23 . A semiconductor light emitting device comprising:
 a light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first through hole penetrating through the light emitting structure to connect a top surface of the second conductivity type semiconductor layer and a bottom surface of the first conductivity type;   an etch stop layer disposed on the top surface of the second conductivity type semiconductor layer, the etch stop layer comprising a second through hole communicating with the first through hole;   a current spreading layer disposed on top surfaces of the second conductivity type semiconductor layer and the etch stop layer;   a first electrode structure on the bottom surface of the first conductivity type semiconductor layer and electrically connected to the first conductivity type semiconductor layer;   a second electrode structure on the bottom surface of the first conductivity type semiconductor layer and electrically connected to the current spreading layer through the first through hole and the second through hole;   a transparent adhesive layer on the current spreading layer;   a graded index layer having a predetermined refractive index and disposed between the current spreading layer and the transparent adhesive layer; and   a transparent support substrate adhered onto the transparent adhesive layer.