Quantum dot array on directly patterned amoled displays and method of fabrication

Abstract

An active matrix OLED apparatus comprises a plurality of pixels each including a layer of three sub-pixel anodes, a transparent cathode layer, and a layer of three sub-pixel OLED emitters disposed between the layer of three sub-pixel anodes and the cathode layer. Each of the plurality of pixels further includes a quantum dot semiconductor nanocrystal layer disposed above the transparent cathode layer, the quantum dot layer comprising a first quantum dot sub-pixel layer having a photoluminescent emission in a first red color wavelength range substantially between 780 to 622 nm, wherein the first quantum dot sub-pixel layer being disposed over one of the three sub-pixel OLED emitters having a light emission wavelength in the first red color wavelength range. The OLED apparatus further includes a controller configured to independently address each of the three sub-pixel OLED emitters via the transparent cathode layer and each of the three sub-pixel anodes.

What is claimed is: 
     
         1 . An active matrix OLED apparatus comprising:
 a plurality of pixels, each of the plurality of pixels including
 a layer of three sub-pixel anodes, 
 a transparent cathode layer, 
 a layer of three sub-pixel OLED emitters disposed between the layer of three sub-pixel anodes and the cathode layer, each of the three sub-pixel OLED emitters corresponding to the three sub-pixel anodes, respectively, 
 a quantum dot semiconductor nanocrystal layer disposed above the transparent cathode layer, the quantum dot layer comprises a first quantum dot sub-pixel layer having a photoluminescent emission in a first wavelength range substantially between 780 to 622 nm, wherein the first quantum dot sub-pixel layer being disposed over one of the three sub-pixel OLED emitters having a light emission wavelength in the first wavelength range; and 
   a controller configured to independently address each of the three sub-pixel OLED emitters via the transparent cathode layer and each of the three sub-pixel anodes.   
     
     
         2 . The apparatus of  claim 1 , further comprising a color filter disposed over the first quantum dot sub-pixel layer configured to narrow the wavelength of the photoluminescent emission of the first quantum dot sub-pixel layer. 
     
     
         3 . The apparatus of  claim 1 , wherein the quantum dot semiconductor nanocrystal layer further comprises a second quantum dot sub-pixel layer having a photoluminescent emission in a second wavelength range substantially between 577 to 492 nm. 
     
     
         4 . The apparatus of  claim 3 , wherein the second quantum dot sub-pixel layer being disposed over another one of the three sub-pixel OLED emitters having a light emission wavelength in the second wavelength range. 
     
     
         5 . The apparatus of  claim 4 , further comprising a color filter disposed over the second quantum dot sub-pixel layer configured to narrow the wavelength of the photoluminescent emission of the second quantum dot sub-pixel layer. 
     
     
         6 . The apparatus of  claim 1 , wherein the quantum dot semiconductor nanocrystal layer further comprises a second quantum dot sub-pixel layer being disposed over another one of the three sub-pixel OLED emitters and having a light emission wavelength in a third wavelength range substantially between 492 to 455 nm. 
     
     
         7 . The apparatus of  claim 6 , further comprising a color filter disposed over the second quantum dot sub-pixel layer configured to narrow the wavelength of the photoluminescent emission of the second quantum dot sub-pixel layer. 
     
     
         8 . An active matrix OLED apparatus comprising:
 a plurality of pixels, each of the plurality of pixels including
 a layer of three sub-pixel anodes, 
 a transparent cathode layer, 
 a layer of three sub-pixel OLED emitters disposed between the layer of three sub-pixel anodes and the cathode layer, each of the three sub-pixel OLED emitters corresponding to the three sub-pixel anodes, respectively, 
 a quantum dot semiconductor nanocrystal layer disposed above the transparent cathode layer, the quantum dot layer comprises a first quantum dot sub-pixel layer having a photoluminescent emission in a first wavelength range substantially between 780 to 622 nm, wherein the first quantum dot sub-pixel layer being disposed over one of the three sub-pixel OLED emitters having a light emission wavelength in a second wavelength range substantially between 577 to 492 nm; and 
   a controller configured to independently address each of the three sub-pixel OLED emitters via the transparent cathode layer and each of the three sub-pixel anodes.   
     
     
         9 . The apparatus of  claim 8 , further comprising a color filter disposed over the first quantum dot sub-pixel layer configured to narrow the wavelength of the photoluminescent emission of the first quantum dot sub-pixel layer. 
     
     
         10 . The apparatus of  claim 8 , wherein the quantum dot semiconductor nanocrystal layer further comprises a second quantum dot sub-pixel layer having a photoluminescent emission in the second wavelength range. 
     
     
         11 . The apparatus of  claim 10 , wherein the second quantum dot sub-pixel layer being disposed over another one of the three sub-pixel OLED emitters having a light emission wavelength in the second wavelength range. 
     
     
         12 . The apparatus of  claim 11 , further comprising a color filter disposed over the second quantum dot sub-pixel layer configured to narrow the wavelength of the photoluminescent emission of the second quantum dot sub-pixel layer. 
     
     
         13 . The apparatus of  claim 8 , wherein the quantum dot semiconductor nanocrystal layer further comprises a second quantum dot sub-pixel layer being disposed over another one of the three sub-pixel OLED emitters and having a light emission wavelength in a third wavelength range substantially between 492 to 455 nm. 
     
     
         14 . The apparatus of  claim 13 , further comprising a color filter disposed over the second quantum dot sub-pixel layer configured to narrow the wavelength of the photoluminescent emission of the second quantum dot sub-pixel layer. 
     
     
         15 . An active matrix OLED apparatus comprising:
 a plurality of pixels, each of the plurality of pixels including
 a layer of three sub-pixel anodes, 
 a transparent cathode layer, 
 a layer of three sub-pixel OLED emitters disposed between the layer of three sub-pixel anodes and the cathode layer, each of the three sub-pixel OLED emitters corresponding to the three sub-pixel anodes, respectively, 
 a quantum dot semiconductor nanocrystal layer disposed above the transparent cathode layer, the quantum dot layer comprises a first quantum dot sub-pixel layer having a photoluminescent emission in a first wavelength range substantially between 780 to 622 nm, wherein the first quantum dot sub-pixel layer being disposed over one of the three sub-pixel OLED emitters having a light emission wavelength in a second wavelength range substantially between 492 to 455, and 
   a controller configured to independently address each of the three sub-pixel OLED emitters via the transparent cathode layer and each of the three sub-pixel anodes.   
     
     
         16 . The apparatus of  claim 15 , further comprising a color filter disposed over the first quantum dot sub-pixel layer configured to narrow the wavelength of the photoluminescent emission of the first quantum dot sub-pixel layer. 
     
     
         17 . The apparatus of  claim 15 , wherein the quantum dot semiconductor nanocrystal layer further comprises a second quantum dot sub-pixel layer having a photoluminescent emission in a third wavelength range substantially between 577 to 492 nm. 
     
     
         18 . The apparatus of  claim 17 , wherein the second quantum dot sub-pixel layer being disposed over another one of the three sub-pixel OLED emitters having a light emission wavelength in the second wavelength range. 
     
     
         19 . The apparatus of  claim 18 , further comprising a color filter disposed over the second quantum dot sub-pixel layer configured to narrow the wavelength of the photoluminescent emission of the second quantum dot sub-pixel layer. 
     
     
         20 . The apparatus of  claim 15 , wherein the quantum dot semiconductor nanocrystal layer further comprises a second quantum dot sub-pixel layer being disposed over another one of the three sub-pixel OLED emitters having a light emission wavelength in the third wavelength range. 
     
     
         21 . The apparatus of  claim 20 , further comprising a color filter disposed over the second quantum dot sub-pixel layer configured to narrow the wavelength of the photoluminescent emission of the second quantum dot sub-pixel layer.