Semiconductor device, method of manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator

Abstract

A semiconductor device according to an embodiment includes a silicon carbide layer, an insulating layer, and a region provided between the silicon carbide layer and the insulating layer, the region including a plurality of first atoms of one element from the group consisting of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), and bismuth (Bi), at least some of the plurality of first atoms being four-fold coordinated atoms and/or five-fold coordinated atoms.

1 - 23 . (canceled) 
     
     
         24 . A method of manufacturing a semiconductor device, the method comprising:
 forming a first silicon oxide film on a silicon carbide layer, ultraviolet rays being irradiated towards the silicon carbide layer during formation of the first silicon oxide film while supplying a plurality of first atoms and at least one of a plurality of second atoms, a plurality of deuterium atoms, and a plurality of hydroxyl groups to the silicon carbide layer, and   forming a gate electrode on the first silicon oxide film,   wherein the first atoms comprise at least one element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony, and bismuth; and   the second atoms comprise at least one element selected from the group consisting of oxygen, sulfur, selenium, tellurium, hydrogen, and fluorine.   
     
     
         25 . The method of  claim 24 ,
 wherein a temperature when the first silicon oxide film is formed is equal to or greater than 200° C. and equal to or less than 800° C.   
     
     
         26 . The method of  claim 24 ,
 wherein the forming the first silicon oxide film comprises:   forming a silicon film being polycrystalline or amorphous comprising the plurality of first atoms, and   oxidizing the silicon film, the ultraviolet rays being irradiated during the oxidizing the silicon film.   
     
     
         27 . The method of  claim 26 ,
 wherein the plurality of first atoms are phosphorus atoms.   
     
     
         28 . The method of  claim 27 ,
 wherein the forming the silicon film comprises deposition of a phosphorus-doped silicon film.   
     
     
         29 . The method of  claim 26 ,
 wherein the plurality of first atoms are nitrogen atoms.   
     
     
         30 . The method  claim 24 ,
 wherein an energy of the ultraviolet rays is equal to or greater than 3.0 eV and equal to or less than 4.0 eV.   
     
     
         31 . The method of  claim 24 , further comprising:
 forming a second silicon oxide film on the first silicon oxide film before the forming the gate electrode.   
     
     
         32 . A method of manufacturing a semiconductor device, the method comprising:
 forming a first silicon oxide film on a silicon carbide layer while supplying a plurality of first atoms of at least one element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony, and bismuth to the silicon carbide layer;   irradiating the first silicon oxide film with ultraviolet rays while supplying at least one of a plurality of second atoms, a plurality of deuterium atoms, and a plurality of hydroxyl groups, the second atoms being at least one element selected from the group consisting of oxygen, sulfur, selenium, tellurium, hydrogen, and fluorine; and   forming a gate electrode on the first silicon oxide film.   
     
     
         33 . The method of  claim 32 ,
 wherein the ultraviolet rays are irradiated towards the silicon carbide layer during the forming the first silicon oxide film.   
     
     
         34 . The method of  claim 32 ,
 wherein the forming the first silicon oxide film comprises;   forming a silicon film being polycrystalline or amorphous comprising the plurality of first atoms, and   oxidizing the silicon film, the ultraviolet rays being irradiated during the oxidizing the silicon film.   
     
     
         35 . The method of  claim 34 ,
 wherein the plurality of first atoms are phosphorus atoms.   
     
     
         36 . The method of  claim 35 ,
 wherein the forming the silicon film comprises deposition of a phosphorus-doped silicon film.   
     
     
         37 . The method of  claim 34 ,
 wherein the plurality of first atoms are nitrogen atoms.   
     
     
         38 . The method of  claim 32 ,
 wherein an energy of the ultraviolet rays is equal to or greater than 3.0 eV and equal to or less than 4.0 eV.   
     
     
         39 . The method of  claim 32 , further comprising:
 forming a second silicon oxide film on the first silicon oxide film before the forming the gate electrode.