Polishing pad and polishing method

Abstract

A polishing pad is provided. The polishing pad, suitable for a polishing process, includes a polishing layer, an adhesive layer and at least one heat storage material. The polishing layer has a polishing surface and a back surface opposite to each other. The adhesive layer is disposed on the back surface of the polishing layer. A region where the at least one heat storage material is disposed is located above the adhesive layer.

What is claimed is: 
     
         1 . A polishing pad suitable for a polishing process, the polishing pad comprising:
 a polishing layer having a polishing surface and a back surface opposite to each other;   an adhesive layer disposed on the back surface of the polishing layer; and   at least one heat storage material, wherein a region where the at least one heat storage material is disposed is located above the adhesive layer.   
     
     
         2 . The polishing pad of  claim 1 , wherein the at least one heat storage material is dispersed in a material of the polishing layer. 
     
     
         3 . The polishing pad of  claim 1 , wherein the at least one heat storage material forms an interface layer in the region where the at least one heat storage material is disposed, and the interface layer is disposed above the adhesive layer. 
     
     
         4 . The polishing pad of  claim 1 , further comprising at least one groove disposed in the polishing surface of the polishing layer, wherein the region where the at least one heat storage material is disposed does not contact a bottom of the at least one groove. 
     
     
         5 . The polishing pad of  claim 4 , wherein the at least one groove has a groove depth D from the bottom of the at least one groove to the polishing surface, and a distance from a top edge of the region where the at least one heat storage material is disposed to the polishing surface is smaller than or equal to 1.5 D and larger than D. 
     
     
         6 . The polishing pad of  claim 1 , wherein a lowest temperature of the polishing pad is Tmin and a highest temperature of the polishing pad is Tmax during the polishing process, and the at least one heat storage material undergoes an endothermic reaction at a temperature between the Tmin and the Tmax. 
     
     
         7 . The polishing pad of  claim 6 , wherein a molecular arrangement of the at least one heat storage material after the endothermic reaction is looser than a molecular arrangement of the at least one heat storage material before the endothermic reaction. 
     
     
         8 . The polishing pad of  claim 6 , wherein the at least one heat storage material undergoes a phase transition from a first solid state to a second solid state during the endothermic reaction, and molecular arrangements of the first solid state and the second solid state are different. 
     
     
         9 . The polishing pad of  claim 1 , wherein the at least one heat storage material comprises an inorganic heat storage material, an organic heat storage material, or a combination thereof. 
     
     
         10 . The polishing pad of  claim 9 , wherein the inorganic heat storage material comprises a hydrate of a salt. 
     
     
         11 . The polishing pad of  claim 9 , wherein the organic heat storage material comprises a polyol, a fatty alcohol, a fatty acid, or an alkane. 
     
     
         12 . The polishing pad of  claim 1 , further comprising a cover layer covering the at least one heat storage material. 
     
     
         13 . The polishing pad of  claim 12 , wherein a material of the cover layer does not chemically react with a material of the polishing layer or the at least one heat storage material. 
     
     
         14 . The polishing pad of  claim 1 , further comprising a polishing track region for placing a first heat storage material and a non-polishing track region for placing a second heat storage material, wherein a lowest temperature of the polishing pad is Tmin and a highest temperature of the polishing pad is Tmax during the polishing process, and the first heat storage material and second heat storage material respectively undergo endothermic reactions at different temperatures between the Tmin and the Tmax. 
     
     
         15 . The polishing pad of  claim 14 , wherein a temperature of the endothermic reaction of the first heat storage material is lower than a temperature of the endothermic reaction of the second heat storage material. 
     
     
         16 . The polishing pad of  claim 14 , wherein a heat absorption capacity of the first heat storage material is more than a heat absorption capacity of the second heat storage material. 
     
     
         17 . A polishing pad suitable for a polishing process, the polishing pad comprising:
 a polishing layer;   a base layer disposed below the polishing layer;   a first adhesive layer disposed between the polishing layer and the base layer;   a second adhesive layer disposed below the base layer; and   at least one heat storage material, wherein a region where the at least one heat storage material is disposed is located between the first adhesive layer and the second adhesive layer.   
     
     
         18 . The polishing pad of  claim 17 , wherein the base layer has a thickness T, and a distance from a top edge of the region where the at least one heat storage material is disposed to a bottom edge of the region where the at least one heat storage material is disposed is from T/3 to T. 
     
     
         19 . The polishing pad of  claim 17 , wherein the at least one heat storage material is dispersed in a material of the base layer. 
     
     
         20 . The polishing pad of  claim 19 , wherein the region where the at least one heat storage material is disposed covers the entire base layer, or is located at at least one of the following locations:
 (a) a portion of the base layer adjacent to the first adhesive layer, and   (b) a portion of the base layer adjacent to the second adhesive layer.   
     
     
         21 . The polishing pad of  claim 17 , wherein the at least one heat storage material forms an interface layer in the region where the at least one heat storage material is disposed, and the interface layer is located at at least one of the following locations:
 (c) between the base layer and the first adhesive layer; and   (d) between the base layer and the second adhesive layer.   
     
     
         22 . The polishing pad of  claim 17 , wherein a lowest temperature of the polishing pad is Tmin and a highest temperature of the polishing pad is Tmax during the polishing process, and the at least one heat storage material undergoes an endothermic reaction at a temperature between the Tmin and the Tmax. 
     
     
         23 . The polishing pad of  claim 22 , wherein a molecular arrangement of the at least one heat storage material after the endothermic reaction is looser than a molecular arrangement of the at least one heat storage material before the endothermic reaction. 
     
     
         24 . The polishing pad of  claim 22 , wherein the at least one heat storage material undergoes a phase transition from a first solid state to a second solid state during the endothermic reaction, and molecular arrangements of the first solid state and the second solid state are different. 
     
     
         25 . The polishing pad of  claim 17 , wherein the at least one heat storage material comprises an inorganic heat storage material, an organic heat storage material, or a combination thereof. 
     
     
         26 . The polishing pad of  claim 25 , wherein the inorganic heat storage material comprises a hydrate of a salt. 
     
     
         27 . The polishing pad of  claim 25 , wherein the organic heat storage material comprises a polyol, a fatty alcohol, a fatty acid, or an alkane. 
     
     
         28 . The polishing pad of  claim 17 , further comprising a cover layer covering the at least one heat storage material. 
     
     
         29 . The polishing pad of  claim 28 , wherein a material of the cover layer does not chemically react with a material of the polishing layer or the at least one heat storage material. 
     
     
         30 . The polishing pad of  claim 17 , further comprising a polishing track region for placing a first heat storage material and a non-polishing track region for placing a second heat storage material, wherein a lowest temperature of the polishing pad is Tmin and a highest temperature of the polishing pad is Tmax during the polishing process, and the first heat storage material and second heat storage material respectively undergo endothermic reactions at different temperatures between the Tmin and the Tmax. 
     
     
         31 . The polishing pad of  claim 30 , wherein a temperature of the endothermic reaction of the first heat storage material is lower than a temperature of the endothermic reaction of the second heat storage material. 
     
     
         32 . The polishing pad of  claim 30 , wherein a heat absorption capacity of the first heat storage material is more than a heat absorption capacity of the second heat storage material. 
     
     
         33 . A polishing method suitable for polishing an object, the polishing method comprising:
 providing a polishing pad, wherein the polishing pad is the polishing pad according to  claim 1 ;   applying a pressure to the object to press the object on the polishing pad; and   providing relative motion to the object and the polishing pad to perform the polishing process.   
     
     
         34 . A polishing method suitable for polishing an object, the polishing method comprising:
 providing a polishing pad, wherein the polishing pad is the polishing pad according to  claim 17 ;   applying a pressure to the object to press the object on the polishing pad; and   providing relative motion to the object and the polishing pad to perform the polishing process.