US2018282896A1PendingUtilityA1

Ferroelectric crystal film, electronic component, manufacturing method of ferroelectric crystal film, and manufacturing apparatus therefor

Assignee: YOUTEC CO LTDPriority: Jun 4, 2012Filed: Jun 1, 2018Published: Oct 4, 2018

Est. expiryJun 4, 2032(~5.9 yrs left)· nominal 20-yr term from priority

Inventors:Takeshi Kijima Yuuji Honda Daisuke Iitsuka Kenjirou Hata

C30B 23/08H01L 41/319C30B 1/023H01L 41/318C30B 29/68C30B 7/06Y10T117/10C30B 23/02C30B 29/22H10N 30/078H10N 30/079

PatentIndex Score

Cited by

References

Claims

Abstract

A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.

Claims

exact text as granted — not AI-modified

1 . A manufacturing apparatus for a ferroelectric crystal film, comprising:
 a first apparatus forming a ferroelectric seed crystal film having an orientation in a predetermined face over a substrate in epitaxial growth by a sputtering method;   a second apparatus performing coating to form an amorphous film including ferroelectric material over said ferroelectric seed crystal film by a spin-coat coating method; and   a third apparatus heating said ferroelectric seed crystal film and said amorphous film in an oxygen atmosphere to oxidize and crystallize said amorphous film, and thereby forming a ferroelectric coated-and-sintered crystal film.   
     
     
         2 . The manufacturing apparatus for a ferroelectric crystal film according to  claim 1 , wherein
 said ferroelectric coated-and-sintered crystal film has an orientation in the same face as said predetermined face.   
     
     
         3 . The manufacturing apparatus for a ferroelectric crystal film according to  claim 1 , wherein
 each of said ferroelectric seed crystal film and said ferroelectric coated-and-sintered crystal film is a Pb(Zr, Ti)O 3  film or a (Pb, A) (Zr, Ti)O 3  film and A is configured with at least one kind selected from the group consisting of Li, Na, K, Rb, Ca, Sr, Ba, Bi, and La.   
     
     
         4 . The manufacturing apparatus for a ferroelectric crystal film according to  claim 3 , wherein
 a Zr/Ti ratio in the number of elements for said Pb(Zr, Ti)O 3  film or (Pb, A) (Zr, Ti)O 3  film satisfies the following formula (1).
   60/40≤Zr/Ti≤40/60  (1)
 
   
     
     
         5 . The manufacturing apparatus for a ferroelectric crystal film according to  claim 3 , wherein
 each ratio in the number of elements for said Pb(Zr, Ti)O 3  film satisfies the following formula (2) and each ratio in the number of elements for said (Pb, A) (Zr, Ti)O 3  film satisfies the following formula (3).
   Pb/(Zr+Ti)&lt;1.06  (2)
 
   (Pb+A)/(Zr+Ti)≤1.35  (3)
 
   
     
     
         6 . The manufacturing apparatus for a ferroelectric crystal film according to  claim 3 , wherein
 said ferroelectric seed crystal film has an orientation in ( 001 ), and   said ferroelectric coated-and-sintered crystal film has an orientation in ( 001 ).   
     
     
         7 . The manufacturing apparatus for a ferroelectric crystal film according to  claim 3 , wherein
 said ferroelectric seed crystal film has an orientation in ( 111 ), and   said ferroelectric coated-and-sintered crystal film has an orientation in ( 111 ).

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.