US2018320029A1PendingUtilityA1

Curable resin film and first protective film forming sheet

Assignee: LINTEC CORPPriority: Nov 4, 2015Filed: Nov 2, 2016Published: Nov 8, 2018
Est. expiryNov 4, 2035(~9.3 yrs left)· nominal 20-yr term from priority
C08L 2203/16C08L 63/00C09J 163/00C09J 7/20C09J 2203/326C08J 5/18C09J 2433/00C09J 4/06C09J 7/30B32B 2038/0076C08L 2203/20B32B 27/06C09J 2463/00B32B 3/30C09J 7/38H10W 72/01261H10W 72/012H10W 72/30H01L 2224/11515H01L 24/26C09J 7/25H10W 74/47H10W 74/117C08L 33/00C09J 133/00C09D 133/04
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Claims

Abstract

A curable resin film of the present invention forms a first protective film ( 1 a ) by attaching the curable resin film containing an epoxy-based thermosetting component having a weight-average molecular weight of 200 to 4,000 to a surface ( 5 a ) of a semiconductor wafer ( 5 ) having a plurality of bumps ( 51 ) with an average peak height (h1) of 50 to 400 μm, an average diameter of 60 to 500 μm, and an average pitch of 100 to 800 μm, heating the attached curable resin film at 100° C. to 200° C. for 0.5 to 3 hours, and curing the heated curable resin film, and when longitudinal sections thereof are observed by a scanning electron microscope, a ratio (h3/h1) of an average thickness (h3) of the first protective film ( 1 a ) at a center position between the bumps ( 51 ) to an average peak height (h1) of the bumps ( 51 ), and a ratio (h2/h1) of an average thickness (h2) of the first protective film ( 1 a ) at a position being in contact with the plurality of bumps ( 51 ) to the average peak height (h1) satisfy a relationship represented by the following expression of [{(h2/h1)−(h3/h1)}≤0.1].

Claims

exact text as granted — not AI-modified
1 . A curable resin film for forming a first protective film on a surface having a plurality of bumps in a semiconductor wafer by being attached to the surface and being cured,
 wherein the curable resin film contains an epoxy-based thermosetting component having a weight-average molecular weight of 200 to 4,000 as a curable component, and   wherein the first protective film that protects the plurality of bumps is formed by attaching the curable resin film to a surface of the semiconductor wafer having the plurality of bumps with an average peak height h1 of 50 to 400 μm, an average diameter D of 60 to 500 μm in a plan view, and an average pitch P of 100 to 800 μm, heating the attached curable resin film at 100° C. to 200° C. for 0.5 to 3 hours, and curing the heated curable resin film, and when longitudinal sections of the first protective film and the semiconductor wafer having the plurality of bumps are observed by a scanning electron microscope, a ratio (h3/h1) of an average thickness h3 of the first protective film at a center position between the plurality of bumps to the average peak height h1 of the plurality of bumps, and a ratio (h2/h1) of an average thickness h2 of the first protective film at a position being in contact with the plurality of bumps to the average peak height h1 satisfy a relationship represented by the following Expression (1).
   {( h 2/ h 1)−( h 3/ h 1)}≤0.1  (1)
 
   
     
     
         2 . A curable resin film for forming a first protective film on a surface having a plurality of bumps in a semiconductor wafer by being attached to the surface and being cured,
 wherein the curable resin film contains an energy ray-curable component having a weight-average molecular weight of 200 to 4,000 as a curable component, and   wherein the first protective film that protects the plurality of bumps is formed by attaching the curable resin film to a surface of the semiconductor wafer having the plurality of bumps with an average peak height h1 of 50 to 400 μm, an average diameter D of 60 to 500 μm in a plan view, and an average pitch P of 100 to 800 μm, irradiating the attached curable resin film with energy rays under a condition of illuminance of 50 to 500 mW/cm 2 , and light intensity of 100 to 2,000 mJ/cm 2 , and curing the irradiated curable resin film, and when longitudinal sections of the first protective film and the semiconductor wafer having the plurality of bumps are observed by a scanning electron microscope, a ratio (h3/h1) of an average thickness h3 of the first protective film at a center position between the plurality of bumps to the average peak height h1 of the plurality of bumps, and a ratio (h2/h1) of an average thickness h2 of the first protective film at a position being in contact with the plurality of bumps to the average peak height h1 satisfy a relationship represented by the following Expression (1).
   {( h 2/ h 1)−( h 3/ h 1)}≤0.1  (1)
 
   
     
     
         3 . The curable resin film according to  claim 1  which contains 5% to 80% by mass of filler having an average particle diameter of 5 to 1,000 nm. 
     
     
         4 . A first protective film forming sheet comprising the curable resin film according to  claim 1  on one surface of a first supporting sheet.

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