Method and system for applying materials on a substrate

Abstract

Embodiments of the invention are directed to a method of printing lines. A method may include positioning a plurality of print units according to a predefined spacing parameter. A method may include depositing material on a substrate by a plurality of print units to form a respective plurality of parallel lines according to a predefined spacing parameter. A printing unit may be positioned at an angle with respect to a predefined scan direction such that a predefined width of a printed line is achieved. A substrate may be rotated between scans such that a plurality of lines in a respective plurality of directions is printed in a scan direction.

1 . A method of printing, the method comprising:
 positioning a plurality of printing units according to a plurality of spacing values and according to a predefined scan direction; and   while introducing a relative translation between a substrate and said printing units according to said predefined scan direction, depositing material on said substrate by said plurality of printing units to form a plurality of parallel lines on said substrate such that said plurality of parallel lines are spaced from each other according to said plurality of spacing values.   
     
     
         2 . The method of  claim 1 , wherein said plurality of printing units comprise a respective plurality of arrays of nozzles arranged along a first direction and wherein positioning said plurality of printing units is such that said first direction is along said scan direction. 
     
     
         3 . The method of  claim 2 , wherein each of said arrays forms one of said plurality of parallel lines. 
     
     
         4 . The method of  claim 1 , wherein within at least one of said line, droplets of said material partially overlap. 
     
     
         5 . The method of  claim 1 , wherein the material is electrically conductive and the substrate is a semiconductor wafer. 
     
     
         6 . A method of printing, the method comprising:
 positioning at least one printing unit at a predefined angle with respect to a scan direction wherein said printing unit comprises an array of nozzles arranged along a first direction and wherein said angle is determined based on at least one line width parameter; and   while introducing a relative translation between a substrate and said printing unit along said scan direction, depositing material on said substrate by said printing unit to form a line on said substrate according to said width.   
     
     
         7 . The method of  claim 6 , wherein within at least one line, droplets of said material partially overlap. 
     
     
         8 . The method of  claim 6 , wherein the material is electrically conductive and the substrate is a semiconductor wafer. 
     
     
         9 . A system for printing, comprising:
 means for positioning a plurality of printing units according to a plurality of spacing values and according to a predefined scan direction; and   means for introducing a relative translation between a substrate and said printing units according to said predefined scan direction and for depositing, while introducing said relative translation, material on said substrate by said plurality of printing units to form a plurality of parallel lines on said substrate such that said plurality of parallel lines are spaced from each other according to said plurality of spacing values.   
     
     
         10 . The system of  claim 9 , wherein said plurality of printing units comprise a respective plurality of arrays of nozzles arranged along a first direction and wherein positioning said plurality of printing units is such that said first direction is along said scan direction. 
     
     
         11 . The system of  claim 10 , wherein each of said arrays forms one of said plurality of parallel lines. 
     
     
         12 . The system of  claim 9 , wherein within at least one of said line, droplets of said material partially overlap. 
     
     
         13 . The system of  claim 9 , wherein the material is electrically conductive and the substrate is a semiconductor wafer.