Methods for forming thermoelectric elements

Abstract

The present disclosure provides a method for forming a thermoelectric device, comprising providing a semiconductor substrate and providing a first layer of an etching material adjacent to the semiconductor substrate. The etching material facilitates the etching of the semiconductor substrate upon exposure to an oxidizing agent and a chemical etchant. Next, a second layer of a semiconductor oxide is provided adjacent to the first layer, and the second layer is patterned to form a pattern of holes or wires. The second layer and first layer are then sequentially etched to expose portions of the semiconductor substrate. Exposed portions of the semiconductor substrate are then contacted with an oxidizing agent and a chemical etchant to transfer the pattern to the semiconductor substrate.

1 - 38 . (canceled) 
     
     
         39 . A method for forming a thermoelectric element having a figure of merit (ZT) that is at least about 0.2, comprising:
 (a) providing a chamber comprising a first substrate in contact with a second substrate, wherein said first substrate and said second substrate are disposed between and in electrical communication with a plurality of electrodes; and   (b) using said plurality of electrodes to apply an electrical potential across said first substrate and said second substrate to direct electrical current through said first substrate and said second substrate, to form a thermoelectric element comprising a pattern of holes, wherein said thermoelectric element has said ZT that is at least about 0.2.   
     
     
         40 . The method of  claim 39 , wherein (b) is performed while applying pressure to said first substrate and said second substrate. 
     
     
         41 . The method of  claim 40  wherein said pressure is greater than or equal to about 1 atm. 
     
     
         42 . The method of  claim 41 , wherein said pressure is greater than or equal to about 100 atm. 
     
     
         43 . The method of  claim 42 , wherein said pressure is greater than or equal to about 1000 atm. 
     
     
         44 . The method of  claim 39 , wherein said thermoelectric element is formed at a temperature from about 100° C. and 1000° C. 
     
     
         45 . The method of  claim 39 , wherein said first substrate or said second substrate comprises one or more members selected from the group consisting of bismuth, antimony, and tellurium. 
     
     
         46 . The method of  claim 45 , wherein each of said first substrate and said second substrate comprises one or more members selected from the group consisting of bismuth, antimony, and tellurium. 
     
     
         47 . The method of  claim 39 , wherein said ZT is at least about 0.5. 
     
     
         48 . The method of  claim 47 , wherein said ZT is at least about 1. 
     
     
         49 . The method of  claim 48 , wherein said ZT is at least about 1.5. 
     
     
         50 . The method of  claim 39 , wherein said first substrate or said second substrate does not include a metallic coating. 
     
     
         51 . The method of  claim 39 , wherein said electrical potential is applied to said first substrate and said second substrate by a direct current. 
     
     
         52 . The method of  claim 39 , wherein said electrical potential is between about 1 volt and 1000 volts. 
     
     
         53 . The method of  claim 52 , wherein said electrical potential is between about 10 volts and 500 volts. 
     
     
         54 . The method of  claim 53 , wherein said electrical potential is between about 20 volts and 200 volts. 
     
     
         55 . The method of  claim 39 , wherein said chamber comprises an inert gas. 
     
     
         56 . The method of  claim 55 , wherein said inert gas comprises nitrogen, argon, or helium. 
     
     
         57 . The method of  claim 39 , wherein said first substrate or said second substrate has a dimension from about 10 micrometers to 500 micrometers.