Selective Molecular Layer Deposition Of Organic And Hybrid Organic-Inorganic Layers

Abstract

Embodiments of the disclosure relate to methods of selectively depositing organic and hybrid organic/inorganic layers. More particularly, embodiments of the disclosure are directed to methods of modifying hydroxyl terminated surfaces for selective deposition of molecular layer organic and hybrid organic/inorganic films. Additional embodiments of the disclosure relate to cyclic compounds for use in molecular layer deposition processes.

What is claimed is: 
     
         1 . A method of depositing a film comprising:
 providing a substrate comprising a first material having a hydrogen terminated surface and a second material having a hydroxyl terminated surface;   exposing the substrate to a modifying compound comprising a modifying species that reacts with the hydroxyl terminated surface of the second material to form a modified second surface on the second material; and   exposing the substrate to one or more deposition gases which react with the modified second surface of the second material to form a film on the second material,   wherein the modifying species has a general formula (RO) 3 Si-L-Si(OR) 3  where each R is independently selected from C1-C4 alkyl groups and L is an aromatic moiety or a carbon chain comprising 1 to 3 carbon atoms.   
     
     
         2 . The method of  claim 1 , wherein the first material comprises silicon and the second material comprises silicon oxide. 
     
     
         3 . The method of  claim 1 , wherein R consists essentially of methyl. 
     
     
         4 . The method of  claim 1 , wherein L is a phenyl group. 
     
     
         5 . The method of  claim 4 , wherein the phenyl group has the silicon atoms in a para position. 
     
     
         6 . The method of  claim 1 , wherein L is —(CH 2 ) 2 —. 
     
     
         7 . The method of  claim 1 , wherein L contains at least one double bond. 
     
     
         8 . The method of  claim 7 , wherein L is —CH═CH—. 
     
     
         9 . A molecular layer deposition method comprising:
 exposing a substrate surface to a first deposition gas comprising one or more compounds with a general structure of:   
       
         
           
           
               
               
           
         
       
       where a ring of the first deposition gas opens and the first deposition gas adsorbs to the substrate surface and L is a linking group comprising at least 1 carbon atoms; and
 exposing the first deposition gas on the substrate surface to a second deposition gas to form a molecular layer on the substrate surface. 
 
     
     
         10 . The method of  claim 9 , wherein the linking group consists essentially of carbon and hydrogen atoms. 
     
     
         11 . The method of  claim 9 , wherein the linking group is substituted with one or more C1-C4 group. 
     
     
         12 . The method of  claim 11 , wherein the first deposition gas consists essentially of 
       
         
           
           
               
               
           
         
       
     
     
         13 . The method of  claim 9 , wherein the linking group comprises 3 carbon atoms. 
     
     
         14 . The method of  claim 13 , wherein the first deposition gas consists essentially of 
       
         
           
           
               
               
           
         
       
     
     
         15 . The method of  claim 9 , wherein the linking group is substituted with one or more halogen atom. 
     
     
         16 . The method of  claim 9 , wherein the linking group is substituted with one or more carbonyl group. 
     
     
         17 . The method of  claim 9 , wherein the linking group comprises at least one double bond. 
     
     
         18 . A molecular layer deposition method comprising:
 exposing a substrate surface to a first deposition gas comprising one or more of   
       
         
           
           
               
               
           
         
       
       where a ring of the first deposition gas opens and the first deposition gas adsorbs to the substrate surface; and
 exposing the first deposition gas on the substrate surface to a second deposition gas to form a molecular layer on the substrate surface. 
 
     
     
         19 . The method of  claim 18 , wherein the first deposition gas consists essentially of 
       
         
           
           
               
               
           
         
       
     
     
         20 . The method of  claim 18 , wherein the first deposition gas consists essentially of