Method of fabricating semiconductor device using conductive adhesive and semiconductor device fabricated by the same

Abstract

A semiconductor device including a first lead electrode and a second lead electrode on a lead frame; a semiconductor stack structure disposed on the lead frame, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a conductive adhesive configured to bond the semiconductor stack structure to the lead frame; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.

What is claimed: 
     
         1 . A semiconductor device, comprising:
 a lead frame, the lead frame comprising a housing forming a recess dimensioned to accommodate a light emitting diode (LED) and a first lead electrode and a second lead electrode disposed in the recess;   the LED comprising a semiconductor stack structure disposed on the lead frame, the semiconductor stack structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers;   a first electrode electrically connected to the first conductive semiconductor layer;   a second electrode electrically connected to the second conductive semiconductor layer;   a conductive adhesive configured to bond the semiconductor stack structure to the lead frame; and   a first wavelength converter that covers at least side surfaces of the semiconductor stack structure,   wherein the conductive adhesive comprises a first conductive adhesive configured to bond the first electrode to the first lead electrode, and a second conductive adhesive configured to bond the second electrode to second lead electrode, and   wherein the first wavelength converter extends to a space between the semiconductor stack structure and the lead frame and covers the semiconductor stack structure.   
     
     
         2 . The device of  claim 1 , wherein the first electrode comprises a first electrode pad and a first additional electrode disposed on the first electrode pad, and
 wherein the second electrode comprises a second electrode pad and a second additional electrode disposed on the second electrode pad.   
     
     
         3 . The device of  claim 2 , wherein the conductive adhesive comprises a first conductive adhesive configured to bond the first additional electrode to the first lead electrode, and a second conductive adhesive configured to bond the second additional electrode to the second lead electrode. 
     
     
         4 . The device of  claim 1 , wherein an inner wall of the recess comprises a reflection surface. 
     
     
         5 . The device of  claim 1 , comprising a second wavelength converter disposed on first conductive semiconductor layer opposite the active region. 
     
     
         6 . The device of  claim 1 , wherein the semiconductor stack structure is divided into at least two cells having inclined side walls, wherein the first electrode is electrically connected to the first conductive semiconductor layer of a first cell and the second electrode is electrically connected to the second conductive semiconductor layer of a second cell; and
 at least one interconnector is configured to connect the first conductive semiconductor layer of the second cell with the second conductive semiconductor layer of the first cell.   
     
     
         7 . A method of fabricating a semiconductor device, the method comprising:
 forming a member comprising a plurality of first lead electrodes and second lead electrodes by:
 punching a copper plate to form the plurality of first lead electrodes and second lead electrodes electrically connected to one another; and 
 molding a plurality of plastic housings on each respective pair of first lead electrode and second lead electrode so as to position one end of the first lead electrode and second lead electrode within a recess dimensioned to accommodate a light emitting diode (LED); 
   forming a plurality of LEDs comprising a plurality of semiconductor stack structures on a first surface of a support substrate, wherein each of the semiconductor stack structures comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers;   adhesively bonding the plurality of semiconductor stack structures to the member while maintaining the plurality of semiconductor stack structures on the support substrate; and   dividing the member after the plurality of semiconductor stack structures are bonded to the member.   
     
     
         8 . The method of  claim 7 , wherein the first conductive semiconductor layer and the second conductive semiconductor layer of each of the semiconductor stack structures comprises a respective first electrode and second electrode that are electrically connected to the member by bonding with conductive adhesive. 
     
     
         9 . The method of  claim 8 , wherein the first and second electrodes are bonded to the first and second lead electrodes of the member, respectively. 
     
     
         10 . The method of  claim 9 , wherein each of the first and second electrodes comprises an electrode pad and an additional electrode. 
     
     
         11 . The method of  claim 9 , wherein the member further comprises a plurality of spacer electrodes, wherein spacer electrodes of the plurality of spacer electrodes are respectively formed on the first and second lead electrodes. 
     
     
         12 . The method of  claim 7 , further comprising:
 forming a first wavelength converter comprising a uniform thickness on a surface of the semiconductor stack structures opposite to the member, after the plurality of semiconductor stack structures are bonded to the member.   
     
     
         13 . The method of  claim 12 , wherein the support substrate comprises a growth substrate, and the first wavelength converter is formed on the growth substrate. 
     
     
         14 . The method of  claim 13 , wherein when the member is divided, the support substrate is divided together with the member. 
     
     
         15 . The method of  claim 13 , further comprising:
 removing the support substrate before the first wavelength converter is formed.   
     
     
         16 . The method of  claim 12 , further comprising:
 forming second wavelength converter on the support substrate, the second wavelength converter covering at least side surfaces of the plurality of semiconductor stack structures.   
     
     
         17 . The method of  claim 12 , further comprising:
 disposing a resin molding portion in a space between the support substrate and the member, wherein the resin molding portion comprises a phosphor.   
     
     
         18 . The method of  claim 17 , wherein the first wavelength converter is formed at the same time as the resin molding portion. 
     
     
         19 . The method of  claim 12 , wherein the support substrate comprises a carrier substrate comprising a plurality of semiconductor chips bonded thereto, and each of the semiconductor chips comprises a semiconductor stack structure of the plurality of the semiconductor stack structures. 
     
     
         20 . The method of  claim 19 , wherein each of the semiconductor chips further comprises a second wavelength converter that covers at least side surfaces of the semiconductor stack structure. 
     
     
         21 . The method of  claim 19 , further comprising:
 removing the carrier substrate after the semiconductor stack structures are bonded to the member; and   disposing a second wavelength converter in a space among the plurality of semiconductor chips,   wherein the first wavelength converter is formed at the same time as the second wavelength converter.