US2018344747A1PendingUtilityA1
Methods and systems for conditioning of particulate crystalline materials
Est. expiryMar 15, 2033(~6.7 yrs left)· nominal 20-yr term from priority
Inventors:Ali KazmiDavid Lechuga-BallesterosHerman E. SnyderJames IveyReinhard VehringJason H. SpeckSarvajna Dwivedi
A61P 11/00A61K 31/58B02C 19/06A61K 31/7016A61K 31/537A61K 9/14A61K 31/56A61K 31/40
49
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
Methods and systems for the preparation of conditioned micronized active agents. Additionally, methods and systems for in-process conditioning of micronized active agent particles and compositions comprising conditioned micronized materials.
Claims
exact text as granted — not AI-modified1 . A method of conditioning a micronized crystalline material comprising:
aerosolizing micronized crystalline particles within a delivery gas, wherein said micronized crystalline particles contain one or both of an amorphous material and a residual solvent; continuously mixing the micronized crystalline particles with a conditioning gas comprising a carrier gas and a conditioning vapor in a chamber; maintaining the aerosolized micronized crystalline particles in contact with the conditioning gas for sufficient time to result in annealing of said micronized crystalline particles, wherein said annealing results in one or both of reducing the presence of the amorphous material or reduction in the amount of residual solvent; and separating the micronized crystalline particles from the conditioning gas.
2 . The method of claim 1 , wherein the micronized crystalline material is mixed with the conditioning gas for between about 0.1 to 600 seconds before the micronized crystalline material exits the conditioning zone.
3 . (canceled)
4 . (canceled)
5 . The method of claim 1 , wherein the micronized crystalline material is water soluble, the solvent vapor included in the conditioning gas is an aqueous solvent vapor, and the conditioning gas is provided at a temperature ranging from 20° C. to 100° C. and at a relative humidity ranging from 0.05% to 95%.
6 . The method of claim 1 , wherein the micronized crystalline material is not water soluble, the solvent vapor included in the conditioning gas is an organic solvent vapor, and the conditioning gas is provided at a temperature ranging from 20° C. to 100° C. and at a relative saturation of a non-aqueous solvent in the range of 0.05% to 95%.
7 . The method of claim 1 , wherein the micronized crystalline material is an admixture of water soluble and non-water soluble materials, the solvent vapor included in the conditioning gas comprises an aqueous solvent vapor and an organic solvent vapor, and the conditioning gas is supplied at a temperature ranging from 10° C. to 100° C. and at a relative humidity of the aqueous solvent in the range of 0.05% to 95% and a relative saturation of the non-aqueous solvent in the range of 0.05% to 95%.
8 . (canceled)
9 . The method of claim 1 , wherein the micronized crystalline material is produced using a jet mill and is aerosolized in the jet mill gas flow.
10 . The method of claim 1 , wherein the conditioning gas is mixed with the aerosolized micronized crystalline material in a ratio of 1 to 10 parts conditioning gas with 1 part of the aerosolized micronized crystalline material.
11 . (canceled)
12 . The method of claim 1 , wherein the conditioning gas is supplied at a flow rate ranging from about 25 standard cubic feet per minute (SCFM) up to 300 SCFM while mixing with the micronized crystalline material.
13 . The method of claim 1 , wherein the aerosolized micronized crystalline material is supplied at a flow rate ranging from about 25 standard cubic feet per minute (SCFM) up to 200 SCFM while mixing with the conditioning gas.
14 . The method of claim 1 , wherein the conditioning gas comprises nitrogen gas.
15 . The method of claim 1 , wherein the micronized crystalline material is mixed with the conditioning gas in a closed chamber.
16 . A system for in-process conditioning of a micronized crystalline material comprising:
a micronizing zone comprising a device for micronizing at least one crystalline material; a mixing zone in fluid communication with the micronizing zone, wherein the at least one micronized crystalline material is delivered from the micronizing zone to the mixing zone and therein mixed with a conditioning gas; a conditioning gas supply zone in fluid communication with the mixing zone, the conditioning gas supply zone providing the conditioning gas at a desired temperature and solvent vapor concentration to the mixing zone to be mixed with the at least one micronized crystalline material; a conditioning zone in fluid communication with the mixing zone, wherein the mixture of the at least one micronized crystalline material and the conditioning gas is delivered and remains in the conditioning zone for a desired residence time; a separation and collection zone, wherein the conditioned micronized crystalline material is separated from the conditioning gas and the conditioned active agent is collected.
17 . The system of claim 16 , wherein the micronized crystalline material is water soluble and the conditioning gas supply zone is configured to provide the conditioning gas at a temperature ranging from 20° C. to 100° C. and at a humidity ranging from 0.05% to 90% relative humidity.
18 . The system of claim 16 , wherein the micronized crystalline material is not water soluble and the conditioning gas supply zone is configured to provide the conditioning gas at a temperature ranging from 20° C. to 100° C. and at a relative saturation of a non-aqueous solvent in the range of 0.05% to 90% in the flowing conditioning gas stream.
19 . The system of claim 16 , wherein the micronized crystalline material is an admixture of water soluble and non-water soluble materials, and the conditioning gas supply zone is configured to provide the conditioning gas at a temperature ranging from 20° C. to 30° C. and at a relative humidity of 50 to 75% and a relative saturation of a non-aqueous solvent in the range of 50% to 75% in the flowing conditioning gas stream.
20 . The system of claim 16 , wherein the conditioning gas supply zone is configured to provide the conditioning gas at a temperature of about 25° C. and with a humidity of about 65% relative humidity.
21 . The system of claim 16 , wherein the conditioning zone is configured to maintain the mixture of the at least one micronized crystalline material and the conditioning gas within the conditioning zone for a residence time of between about 0.5 to 60 seconds.
22 . The system of claim 16 , wherein the conditioning zone is configured to maintain the mixture of the at least one micronized crystalline material and the conditioning gas within the conditioning zone for a residence time of between about 1 to about 10 seconds.
23 . The system of claim 16 wherein the conditioning zone is configure to maintain the mixture of the at least one micronized crystalline material and the conditioning gas within the conditioning zone for a residence time of about 3 seconds.
24 . The system of claim 16 , wherein the micronizing zone comprises a jet mill configured for micronizing the at least one crystalline material.
25 . The system of claim 16 , wherein the conditioning gas supply zone is configured to provide the conditioning gas to the mixing zone at a flow rate ranging from 150 standard cubic feet per minute (SCFM) up to 300 SCFM.
26 . The system of claim 16 , wherein the micronizing zone is configured to deliver the at least one micronized crystalline material as an aerosolized particulate material to the mixing zone at a flow rate ranging from 35 standard cubic feet per minute (SCFM) up to 200 SCFM.
27 . The system of claim 16 , wherein the mixing zone comprises a dispersion head assembly, and wherein the conditioning gas and the micronized crystalline material are mixed in the dispersion head assembly.
28 . The system of claim 27 , wherein the dispersion head assembly comprises a mixing head configured to control the mixing of the conditioning gas and the at least one micronized crystalline material.
29 . The system of claim 28 , wherein the mixing head comprises an injection nozzle inlet configured to deliver the conditioning gas to an injection nozzle, and wherein the mixing head comprises a delivery gas inlet configured to deliver the micronized crystalline material to the injection nozzle, and wherein the injection nozzle is configured for mixing the conditioning gas with the at least one micronized crystalline material.
30 . The system of claim 16 , wherein the residence time in the conditioning zone of the mixture of the micronized crystalline material and the conditioning gas may be modified by adjusting the geometry of the conditioning zone.
31 . The system of claim 16 , wherein the residence time in the conditioning zone of the mixture of the micronized crystalline material and the conditioning gas may be modified by adjusting the rate at which the mixture of the micronized crystalline material and the conditioning gas is delivered from the mixing zone to the conditioning zone.
32 . The system of claim 16 , wherein the separation and collection zone comprises a cyclone collector.
33 . (canceled)
34 . (canceled)
35 . (canceled)
36 . (canceled)
37 . (canceled)
38 . (canceled)
39 . (canceled)
40 . (canceled)
41 . The method of claim 1 , wherein the micronized crystalline particles comprise glycopyrrolate.
42 . The method of claim 1 , wherein the micronized crystalline particles comprise budesonide.Cited by (0)
No later patents cite this yet.
References (0)
No backward citations on record.