US2018374847A1PendingUtilityA1
Semiconductor apparatus
Est. expiryNov 12, 2033(~7.3 yrs left)· nominal 20-yr term from priority
H10W 20/0698H10W 20/435H10W 20/20H01L 29/4236H01L 23/5283H01L 21/823487H01L 27/088H01L 2924/0002H01L 23/535H01L 29/7827H01L 21/76895H01L 29/0865H01L 27/0207H01L 21/823475H10D 84/839H10D 84/83125H10D 84/016H10D 62/127H10D 30/668H10D 62/154H10D 89/10H10D 84/0149H10D 84/038H10D 64/513H10D 30/63H10D 84/83
50
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
A method of manufacturing a semiconductor apparatus includes setting first and second areas on a semiconductor chip, forming a first transistor in the first area, forming a second transistor in the second area, and forming a gate pad of a first transistor and a gate pad of a second transistor in the second area.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of manufacturing a semiconductor apparatus comprising:
setting a first area on a semiconductor chip, the first area being divided into two or more areas, setting a second area on the semiconductor chip, a total area of the second area being greater than a total area of the first area, the second area being divided into two or more areas, and the divided areas of the first area and the second area are alternately arranged; forming a first transistor in the first area; forming a second transistor in the second area; and forming a gate pad of the first transistor and a gate pad of the second transistor in the second area.Cited by (0)
No later patents cite this yet.
References (0)
No backward citations on record.