Aluminum nitride film, method of manufacturing aluminum nitride film, and high withstand voltage component

Abstract

An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.

What is claimed is: 
     
         1 . An aluminum nitride film, comprising
 a polycrystalline aluminum nitride,   wherein a withstand voltage of the aluminum nitride film is 100 kV/mm or more.   
     
     
         2 . The aluminum nitride film according to  claim 1 , wherein:
 the polycrystalline aluminum nitride contains a plurality of aluminum nitride crystal grains; and   a proportion of the grains in the aluminum nitride film is not less than 90 volume % nor more than 100 volume %.   
     
     
         3 . The aluminum nitride film according to  claim 2 , wherein
 an average grain diameter of the grains is 30 nm or less.   
     
     
         4 . The aluminum nitride film according to  claim 1 , wherein
 the withstand voltage is 200 kV/mm or more.   
     
     
         5 . The aluminum nitride film according to  claim 1 , wherein
 an X-ray diffraction pattern obtained by an X-ray diffraction analysis of the aluminum nitride film has a diffraction peak positioned at a diffraction angle 2θ of 33.2±1°.   
     
     
         6 . The aluminum nitride film according to  claim 1 , wherein:
 an X-ray diffraction pattern obtained by an X-ray diffraction analysis of the aluminum nitride film has a first diffraction peak positioned at a diffraction angle 2θ of 33.2±1° and a second diffraction peak positioned at a diffraction angle 2θ of 43.5±1°; and   a ratio of intensity of the second diffraction peak to intensity of the first diffraction peak is 0.01 or more.   
     
     
         7 . The aluminum nitride film according to  claim 1 , wherein
 an X-ray diffraction pattern obtained by an X-ray diffraction analysis of the aluminum nitride film has a diffraction peak based on an aluminum nitride crystal, and does not have a diffraction peak other than the diffraction peak based on the aluminum nitride crystal.   
     
     
         8 . The aluminum nitride film according to  claim 1 , wherein
 the polycrystalline aluminum nitride includes hexagonal aluminum nitride and cubic aluminum nitride.   
     
     
         9 . The aluminum nitride film according to  claim 1 , wherein
 a surface roughness Ra of the aluminum nitride film is 3 μm or less.   
     
     
         10 . The aluminum nitride film according to  claim 1 , wherein
 a thickness of the aluminum nitride film is 1 μm or more.   
     
     
         11 . A high withstand voltage component, comprising:
 a base material; and   the aluminum nitride film according to  claim 1 , being provided on the base material.   
     
     
         12 . The high withstand voltage component according to  claim 11 , wherein
 the high withstand voltage component is a semiconductor element mounting substrate, a component for heater, or a component for semiconductor manufacturing apparatus.   
     
     
         13 . A method of manufacturing an aluminum nitride film, comprising forming the aluminum nitride film according to  claim 1  through a supersonic free jet physical vapor deposition method using an aluminum nitride powder. 
     
     
         14 . The method according to  claim 13 , wherein
 the aluminum nitride film is formed under an inert atmosphere containing nitrogen.   
     
     
         15 . The method according to  claim 14 , wherein
 the inert atmosphere further contains helium.