Method to improve cmp scratch resistance for non planar surfaces

Abstract

An electronic device is formed by providing a substrate having a recess at a top surface. A layer of an organic protective material is formed over the substrate, with the organic protective material extending into the recess. A polishing process is performed on the layer of protective material. The polishing process may remove a portion of an underlying metal layer over the top surface while protecting the underlying metal layer within the recess.

What is claimed is: 
     
         1 . A method of forming an electronic device, comprising:
 providing a substrate having a recess in a top surface of the substrate;   forming a layer of an organic protective material over the substrate, the layer of organic protective material extending into the recess and covering the top surface;   performing a polishing process on the layer of protective material.   
     
     
         2 . The method of  claim 1 , wherein the layer of protective material comprises photoresist. 
     
     
         3 . The method of  claim 1 , wherein the layer of protective material comprises a resin. 
     
     
         4 . The method of  claim 1 , wherein the layer of protective material comprises polymer. 
     
     
         5 . The method of  claim 1 , wherein the layer of protective material comprises a material mixed with a solvent. 
     
     
         6 . The method of  claim 5 , wherein the layer of protective material is treated to remove solvent. 
     
     
         7 . The method of  claim 1 , wherein forming a layer of an organic protective material includes spin-coating the organic protective material onto the top surface. 
     
     
         8 . The method of  claim 1 , wherein the top surface of the substrate comprises a dielectric material. 
     
     
         9 . The method of  claim 1 , wherein the polishing processes comprises chemical-mechanical polishing. 
     
     
         10 . The method of  claim 1 , wherein a metal layer is located over the substrate surface and within the recess prior to forming a layer of an organic protective material over the substrate, and the polishing process removes the metal layer from over the top surface and leaves a remaining portion of the metal layer within the recess. 
     
     
         11 . The method of  claim 10 , wherein the metal layer comprises a first metal sublayer and a different second metal sublayer. 
     
     
         12 . The method of  claim 10 , wherein the remaining portion is conductively coupled to an underlying electronic circuit. 
     
     
         13 . The method of  claim 10 , wherein the protective material has a higher removal rate than does the metal layer for the polishing process. 
     
     
         14 . The method of  claim 10 , wherein the remaining portion is located directly on a copper pad. 
     
     
         15 . The method of  claim 14 , wherein the copper pad is a dummy bond pad. 
     
     
         16 . A method of forming an electronic device, comprising:
 providing a substrate having a recess in a top surface of the substrate;   forming a layer of an organic protective material over the substrate, the layer of organic protective material extending into the recess and covering the top surface;   performing a polishing process on the layer of protective material, thereby removing a portion of an underlying metal layer located over the top surface while protecting the underlying metal layer within the recess.