Photodetector

Abstract

An UV photodetector includes: a substrate, a template layer formed on the substrate, an intrinsic AlGaN layer formed on the template layer, a first n-type AlGaN layer and a second n-type AlGaN layer formed on the intrinsic AlGaN layer side-by-side and separated by a gap, wherein the gap exposes the intrinsic AlGaN layer. Another UV photodetector includes: an UV transparent substrate, an UV transparent template layer formed on the substrate, a first UV transparent n-type AlGaN layer formed on the UV transparent template layer, an intrinsic AlGaN layer formed on the first UV transparent n-type AlGaN layer, a second n-type AlGaN layer formed on the intrinsic AlGaN layer, and a p-type layer formed on the second n-type AlGaN layer.

1 - 12 . (canceled) 
     
     
         13 . An UV photodetector comprising:
 an UV transparent substrate;   an UV transparent template layer formed on the substrate;   a first UV transparent n-type AlGaN layer formed on the UV transparent template layer;   an intrinsic AlGaN layer formed on the first UV transparent n-type AlGaN layer;   a second n-type AlGaN layer formed on the intrinsic AlGaN layer; and   a p-type layer formed on the second n-type AlGaN layer.   
     
     
         14 . The UV photodetector according to  claim 13 , wherein a thicknesses of the first UV transparent n-type AlGaN layer is in the range of 500-1500 nm, and a thickness of the second n-type AlGaN layer is in the range of 100-300 nm. 
     
     
         15 . The UV photodetector according to  claim 13 , wherein the p-type layer includes a p-type AlGaN layer and p-type GaN layer formed on the p-type AlGaN layer, the p-type AlGaN layer and the p-type GaN layer are doped with Mg at a doping level in the range of 1.0-10.0×10 19  cm −3 , respectively, and each has a thickness in the range of 50-100 nm, an Al-content of the p-type AlGaN layer is in the range of 50%-70%. 
     
     
         16 . The UV photodetector according to  claim 13 , wherein the UV transparent template layer is an AlGaN layer with an Al-content in the range of 60%-100% and a thickness in the range of 100-500 nm. 
     
     
         17 . The UV photodetector according to  claim 13 , wherein the first UV transparent n-type AlGaN layer and the second n-type AlGaN layer have an Al-content in the range of 50%-70%, respectfully. 
     
     
         18 . The UV photodetector according to  claim 13 , wherein the intrinsic AlGaN layer has an Al-content in the range of 46%-100% and a thickness in the range of 200-400 nm. 
     
     
         19 . The UV photodetector according to  claim 13 , wherein a first Ohmic contact is formed on the first UV transparent n-type AlGaN layer, and a second Ohmic contact is formed on the p-type layer. 
     
     
         20 . (canceled)