Post-processing apparatus of solar cell

Abstract

A post-processing apparatus of a solar cell that carries out a post-processing operation including a main period for heat-treating a solar cell having a semiconductor substrate while providing light to the solar cell, the post-processing apparatus including a main section to carry out the main period, wherein the main section comprises a first heat source unit to provide heat to the semiconductor substrate and a light source unit to provide light to the semiconductor substrate, the first heat source unit and the light source unit being positioned in the main section, and the light source unit comprises a light source constituted by a plasma lighting system (PLS).

What is claimed is: 
     
         1 . A post-processing apparatus of a solar cell that carries out a post-processing operation including a main period for heat-treating a solar cell having a semiconductor substrate while providing light to the solar cell, the post-processing apparatus comprising:
 a main section to carry out the main period,   wherein the main section comprises a first heat source unit to provide heat to the semiconductor substrate and a light source unit to provide light to the semiconductor substrate, the first heat source unit and the light source unit being positioned in the main section, and   the light source unit comprises a light source constituted by a plasma lighting system (PLS).   
     
     
         2 . The post-processing apparatus according to  claim 1 , wherein light provided to the semiconductor substrate by the light source has a wavelength of 600 nm to 1000 nm. 
     
     
         3 . The post-processing apparatus according to  claim 1 , wherein the light source is provided at a light emitting surface thereof with a cover substrate comprising a base substrate and a plurality of layers positioned on the base substrate, the plurality of layers comprising oxides having different refractive indices. 
     
     
         4 . The post-processing apparatus according to  claim 1 , wherein the light source unit and the first heat source unit respectively provide light and heat to the semiconductor substrate in a state in which the light source unit and the first heat source unit are spaced apart from each other. 
     
     
         5 . The post-processing apparatus according to  claim 1 , further comprising:
 a temperature rising section to carry out a temperature rising period for preliminarily heating the semiconductor substrate, the temperature rising period being carried out before the main period,   wherein the temperature rising section comprises a second heat source unit to preliminarily heat the semiconductor substrate, the second heat source unit being positioned in the temperature rising section.   
     
     
         6 . The post-processing apparatus according to  claim 5 , further comprising an additional heat source unit positioned at an entrance of the temperature rising section such that the additional heat source unit is opposite to the second heat source unit. 
     
     
         7 . The post-processing apparatus according to  claim 1 , further comprising a cooling section to carry out a cooling period for cooling the semiconductor substrate, the cooling period being carried out after the main period. 
     
     
         8 . The post-processing apparatus according to  claim 1 , further comprising:
 a temperature rising section to carry out a temperature rising period for preliminarily heating the semiconductor substrate, the temperature rising period being carried out before the main period;   a cooling section to carry out a cooling period for cooling the semiconductor substrate, the cooling period being carried out after the main period; and   a conveyor belt passing though the temperature rising section, the main section, and the cooling section, and the solar cell being placed on the conveyor belt,   wherein the temperature rising period, the main period, and the cooling period are carried out based on an in-line process.   
     
     
         9 . The post-processing apparatus according to  claim 8 , further comprising a partition wall unit positioned at at least one of a space defined between the temperature rising section and the main section for partitioning the temperature rising section and the main section, and a space defined between the main section and the cooling section for partitioning the main section and the cooling section. 
     
     
         10 . The post-processing apparatus according to  claim 8 , wherein at least one of the temperature rising section and the cooling section further comprise an additional light source positioned adjacent to the main section. 
     
     
         11 . The post-processing apparatus according to  claim 8 , further comprising:
 an air curtain member positioned at at least one of an entrance of the temperature rising section, a space defined between the temperature rising section and the main section, a space defined between the main section and the cooling section, and an exit of the cooling section.   
     
     
         12 . The post-processing apparatus according to  claim 1 , further comprising:
 a temperature rising section to carry out a temperature rising period for preliminarily heating the semiconductor substrate, the temperature rising period being carried out before the main period; and   a cooling section to carry out a cooling period for cooling the semiconductor substrate, the cooling period being carried out after the main period,   wherein the temperature rising section, the main section, and the cooling section have a batch structure in which a process is carried out in a state in which the solar cell is stationary.   
     
     
         13 . The post-processing apparatus according to  claim 1 , wherein the solar cell is placed on a conveyor belt or a work table, and
 the conveyor belt or the work table has a mesh structure.   
     
     
         14 . The post-processing apparatus according to  claim 1 , wherein the main section has a temperature of 100 to 800° C., and the main section has temperature and light intensity satisfying Equation 1 and light intensity and process time satisfying Equations 2 to 5.
   1750−31.8· T +(0.16)· T   2   ≤I≤ 10 5   <Equation 1>
 
   1.7×10 2   ≤I< 10 3 , and  P   min =13000−(31.7)·1+(0.02)·( I ) 2   ≤P≤ 10000  <Equation 2>
 
   10 3   ≤I< 10 4 , and 1030−(0.25)· I +(1.5×10 −5 )·( I ) 2   ≤P≤ 10000  <Equation 3>
 
   10 4   ≤I≤ 5×10 4 , and 35.5−(0.0012)· I +(10 −8 )·( I ) 2   ≤P≤ 10000  <Equation 4>
 
   5×10 4   ≤I≤ 10 5 , and 0.5≤ P≤ 10000  <Equation 5>
 
 where T is temperate (° C.) of the main section, I is light intensity (mW/cm 2 ) of the main section, and P is process time (sec) of the main section.