Semiconductor device

Abstract

A semiconductor device is provided that is excellent in semiconductor properties and Schottky characteristics. A semiconductor device includes: a semiconductor layer containing a crystalline oxide semiconductor with a corundum structure as a major component; and a Schottky electrode on the semiconductor layer, wherein the Schottky electrode is formed by containing a metal of Groups 4-9 of the periodic table, thereby manufacturing a semiconductor device excellent in semiconductor properties and Schottky characteristics without impairing the semiconductor properties to use the semiconductor device thus obtained for a power device and the like.

1 - 15 . (canceled) 
     
     
         16 . A semiconductor device comprising:
 a semiconductor layer comprising a crystalline oxide semiconductor with a corundum structure as a major component; and   a Schottky electrode on the semiconductor layer comprising at least one metal selected from Groups 4-6 of the periodic table.   
     
     
         17 . The semiconductor device of  claim 16 , wherein the semiconductor layer comprising the crystalline oxide semiconductor with the corundum structure is an n − -type semiconductor layer. 
     
     
         18 . The semiconductor device of  claim 17 , further comprising an n + -type semiconductor layer. 
     
     
         19 . The semiconductor device of  claim 17 , further comprising an ohmic electrode. 
     
     
         20 . The semiconductor device of  claim 17  further comprising:
 an insulating layer with a corundum structure arranged between the n − -type semiconductor layer and the Schottky electrode. 
 
     
     
         21 . The semiconductor device of  claim 16 , wherein the crystalline oxide semiconductor with the corundum structure comprised in the semiconductor layer comprises at least gallium. 
     
     
         22 . The semiconductor device of  claim 16 , wherein the semiconductor device comprises a capacitance that is 1000 pF or less at 0 V bias when measured at 1 MHz. 
     
     
         23 . A semiconductor device comprising:
 a semiconductor layer comprising a crystalline oxide semiconductor with a corundum structure as a major component; and   a Schottky electrode on the semiconductor layer comprising at least one metal selected from Groups 4-9 of the periodic table and comprising a transition metal of the fourth period of the periodic table.   
     
     
         24 . The semiconductor device of  claim 23 , wherein the semiconductor layer comprising the crystalline oxide semiconductor with the corundum structure is an n − -type semiconductor layer. 
     
     
         25 . The semiconductor device of  claim 24 , further comprising an n + -type semiconductor layer. 
     
     
         26 . The semiconductor device of  claim 24 , further comprising an ohmic electrode. 
     
     
         27 . The semiconductor device of  claim 24 , further comprising an insulating layer with a corundum structure arranged between the n-type semiconductor layer and the Schottky electrode. 
     
     
         28 . The semiconductor device of  claim 23 , wherein the crystalline oxide semiconductor with the corundum structure comprised in the semiconductor layer comprises at least gallium. 
     
     
         29 . The semiconductor device of  claim 23 , wherein the crystalline oxide semiconductor with the corundum structure comprised in the semiconductor layer comprises α-Ga 2 O 3 . 
     
     
         30 . The semiconductor device of  claim 23 , wherein the crystalline oxide semiconductor with the corundum structure comprised in the semiconductor layer comprises a mixed crystal of α-Ga 2 O 3 . 
     
     
         31 . The semiconductor device of  claim 23 , wherein the semiconductor device comprises a capacitance that is 1000 pF or less at 0 V bias when measured at 1 MHz. 
     
     
         32 . A semiconductor device comprising:
 a semiconductor layer comprising a crystalline oxide semiconductor with a corundum structure as a major component;   a Schottky electrode that is arranged on the semiconductor layer; and   a capacitance that is 1000 pF or less at 0 V bias when measured at 1 MHz.   
     
     
         33 . The semiconductor device of  claim 32 , wherein
 The Schottky electrode on the semiconductor layer comprises at least one metal selected from Groups 4-9 of the periodic table.   
     
     
         34 . The semiconductor device of  claim 32 , wherein the semiconductor layer comprising the crystalline oxide semiconductor with the corundum structure is an n − -type semiconductor layer. 
     
     
         35 . The semiconductor device of  claim 32 , further comprising an n + -type semiconductor layer. 
     
     
         36 . The semiconductor device of  claim 32 , further comprising an ohmic electrode. 
     
     
         37 . The semiconductor device of  claim 32 , further comprising an insulating layer with a corundum structure arranged between the n − -type semiconductor layer and the Schottky electrode.